Non-volatile paper transistors with poly(vinylidene fluoride-trifluoroethylene) thin film using a solution processing method

This study demonstrates a new and realizable possibility of 1T-type ferroelectric random access memory devices using an all solution processing method with cellulose paper substrates. A ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin film was formed on a paper substrate with an Al electrode for the bottom gate structure, and then a semiconducting poly(3-hexylthiophene) (P3HT) thin film was formed on the P(VDF-TrFE)/paper structure using a spin-coating technique. The fabricated ferroelectric gate field effect transistors (FeFETs) on the cellulose paper substrates demonstrated excellent ferroelectric property with a memory window width of 20 V for a bias voltage sweep from −30 to 30 V, and the on/off ratio of the device was approximately 10². These results agree well with those of the FeFETs fabricated on a rigid Si substrate. These results will lead to the emergence of printable electron devices on paper. Furthermore, these non-volatile paper memory devices, which are fabricated by a solution processing method, are reliable, very inexpensive, have a high-density, and can be fabricated easily.