Noncontact probing of metal-oxide-semiconductor inversion layer mobility

Joo Hiuk Son; Seongtae Jeong; Jeffrey Bokor

doi:10.1063/1.117483

Noncontact probing of metal-oxide-semiconductor inversion layer mobility

Joo Hiuk Son, Seongtae Jeong, Jeffrey Bokor

Department of Physics

University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have measured absorption of terahertz radiation pulses by metal-oxide-semiconductor (MOS) inversion layers and thereby determined carrier mobility without the need for source and drain contacts. This has allowed for the determination of inversion layer mobility prior to subsequent high temperature processing. An unannealed MOS sample was found to have a mobility value of 400 cm²/V s, which increased to 700 cm²/V s after a 950°C anneal.

Original language	English
Pages (from-to)	1779-1780
Number of pages	2
Journal	Applied Physics Letters
Volume	69
Issue number	12
DOIs	https://doi.org/10.1063/1.117483
State	Published - 16 Sep 1996

Access to Document

10.1063/1.117483

Cite this

@article{03d1b44594124cf09b8d73d7665701cd,

title = "Noncontact probing of metal-oxide-semiconductor inversion layer mobility",

abstract = "We have measured absorption of terahertz radiation pulses by metal-oxide-semiconductor (MOS) inversion layers and thereby determined carrier mobility without the need for source and drain contacts. This has allowed for the determination of inversion layer mobility prior to subsequent high temperature processing. An unannealed MOS sample was found to have a mobility value of 400 cm2/V s, which increased to 700 cm2/V s after a 950°C anneal.",

author = "Son, {Joo Hiuk} and Seongtae Jeong and Jeffrey Bokor",

year = "1996",

month = sep,

day = "16",

doi = "10.1063/1.117483",

language = "English",

volume = "69",

pages = "1779--1780",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Noncontact probing of metal-oxide-semiconductor inversion layer mobility

AU - Son, Joo Hiuk

AU - Jeong, Seongtae

AU - Bokor, Jeffrey

PY - 1996/9/16

Y1 - 1996/9/16

N2 - We have measured absorption of terahertz radiation pulses by metal-oxide-semiconductor (MOS) inversion layers and thereby determined carrier mobility without the need for source and drain contacts. This has allowed for the determination of inversion layer mobility prior to subsequent high temperature processing. An unannealed MOS sample was found to have a mobility value of 400 cm2/V s, which increased to 700 cm2/V s after a 950°C anneal.

AB - We have measured absorption of terahertz radiation pulses by metal-oxide-semiconductor (MOS) inversion layers and thereby determined carrier mobility without the need for source and drain contacts. This has allowed for the determination of inversion layer mobility prior to subsequent high temperature processing. An unannealed MOS sample was found to have a mobility value of 400 cm2/V s, which increased to 700 cm2/V s after a 950°C anneal.

UR - http://www.scopus.com/inward/record.url?scp=0043122714&partnerID=8YFLogxK

U2 - 10.1063/1.117483

DO - 10.1063/1.117483

M3 - Article

AN - SCOPUS:0043122714

SN - 0003-6951

VL - 69

SP - 1779

EP - 1780

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Noncontact probing of metal-oxide-semiconductor inversion layer mobility

Abstract

Access to Document

Other files and links

Fingerprint

Cite this