Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes

Eunkyeom Kim; Kyoungmin Kim; Daeho Son; Jeongho Kim; Kyungsu Lee; Moonsup Han; Sunghwan Won; Junghyun Sok; Wan Shick Hong; Kyoungwan Park

doi:10.1016/j.mee.2008.09.037

Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes

Eunkyeom Kim, Kyoungmin Kim, Daeho Son, Jeongho Kim, Kyungsu Lee, Moonsup Han, Sunghwan Won, Junghyun Sok, Wan Shick Hong, Kyoungwan Park

University of Seoul

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The charge and discharge properties of NiSi nanodots in the gate oxide of MOS and MOSFET devices were investigated in order to utilize as the charge-storage nodes in a nonvolatile floating-gate memory. NiSi nanodots were formed by sputtering Ni and successive exposing to SiH₄ gas. The memory characteristics of MOS and MOSFET devices which contain the NiSi nanodots in the gate oxide were obtained through the capacitance-voltage measurements and the transient threshold voltage shift measurements. The window of threshold voltage shift was achieved to be 2.5 V when the gate bias voltages of ±20 V were applied for 1 s and 500 ms, respectively. The retention time of MOSFET memory-cell was estimated to be about 10 years.

Original language	English
Pages (from-to)	2366-2369
Number of pages	4
Journal	Microelectronic Engineering
Volume	85
Issue number	12
DOIs	https://doi.org/10.1016/j.mee.2008.09.037
State	Published - Dec 2008

Keywords

Flash memory
Metallic nanodots floating-gate memory
Ni nanodots
NiSi nanodots
Nonvolatile memory

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10.1016/j.mee.2008.09.037

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title = "Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes",

abstract = "The charge and discharge properties of NiSi nanodots in the gate oxide of MOS and MOSFET devices were investigated in order to utilize as the charge-storage nodes in a nonvolatile floating-gate memory. NiSi nanodots were formed by sputtering Ni and successive exposing to SiH4 gas. The memory characteristics of MOS and MOSFET devices which contain the NiSi nanodots in the gate oxide were obtained through the capacitance-voltage measurements and the transient threshold voltage shift measurements. The window of threshold voltage shift was achieved to be 2.5 V when the gate bias voltages of ±20 V were applied for 1 s and 500 ms, respectively. The retention time of MOSFET memory-cell was estimated to be about 10 years.",

keywords = "Flash memory, Metallic nanodots floating-gate memory, Ni nanodots, NiSi nanodots, Nonvolatile memory",

author = "Eunkyeom Kim and Kyoungmin Kim and Daeho Son and Jeongho Kim and Kyungsu Lee and Moonsup Han and Sunghwan Won and Junghyun Sok and Hong, {Wan Shick} and Kyoungwan Park",

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T1 - Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes

AU - Kim, Eunkyeom

AU - Kim, Kyoungmin

AU - Son, Daeho

AU - Kim, Jeongho

AU - Lee, Kyungsu

AU - Han, Moonsup

AU - Won, Sunghwan

AU - Sok, Junghyun

AU - Hong, Wan Shick

AU - Park, Kyoungwan

PY - 2008/12

Y1 - 2008/12

N2 - The charge and discharge properties of NiSi nanodots in the gate oxide of MOS and MOSFET devices were investigated in order to utilize as the charge-storage nodes in a nonvolatile floating-gate memory. NiSi nanodots were formed by sputtering Ni and successive exposing to SiH4 gas. The memory characteristics of MOS and MOSFET devices which contain the NiSi nanodots in the gate oxide were obtained through the capacitance-voltage measurements and the transient threshold voltage shift measurements. The window of threshold voltage shift was achieved to be 2.5 V when the gate bias voltages of ±20 V were applied for 1 s and 500 ms, respectively. The retention time of MOSFET memory-cell was estimated to be about 10 years.

AB - The charge and discharge properties of NiSi nanodots in the gate oxide of MOS and MOSFET devices were investigated in order to utilize as the charge-storage nodes in a nonvolatile floating-gate memory. NiSi nanodots were formed by sputtering Ni and successive exposing to SiH4 gas. The memory characteristics of MOS and MOSFET devices which contain the NiSi nanodots in the gate oxide were obtained through the capacitance-voltage measurements and the transient threshold voltage shift measurements. The window of threshold voltage shift was achieved to be 2.5 V when the gate bias voltages of ±20 V were applied for 1 s and 500 ms, respectively. The retention time of MOSFET memory-cell was estimated to be about 10 years.

KW - Flash memory

KW - Metallic nanodots floating-gate memory

KW - Ni nanodots

KW - NiSi nanodots

KW - Nonvolatile memory

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DO - 10.1016/j.mee.2008.09.037

M3 - Article

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VL - 85

SP - 2366

EP - 2369

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 12

ER -

Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes

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Keywords

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