Nonvolatile organic field-effect transistors fabricated on al foil substrates

Min Gee Kim, Soo Yong Kim, Dae Hee Han, Byung Eun Park

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We fabricated metal-ferroelectric-metal capacitors and bottomgate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly-(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.

Original languageEnglish
Article number20170143
JournalIEICE Electronics Express
Issue number10
StatePublished - 2017


  • Ferroelectric
  • Flexible
  • Nonvolatile transistor
  • P(VDF-TrFE)
  • P3HT


Dive into the research topics of 'Nonvolatile organic field-effect transistors fabricated on al foil substrates'. Together they form a unique fingerprint.

Cite this