Abstract
We fabricated metal-ferroelectric-metal capacitors and bottomgate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly-(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.
Original language | English |
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Article number | 20170143 |
Journal | IEICE Electronics Express |
Volume | 14 |
Issue number | 10 |
DOIs | |
State | Published - 2017 |
Keywords
- Ferroelectric
- Flexible
- Nonvolatile transistor
- P(VDF-TrFE)
- P3HT