Novel pathway to the growth of diamond on cubic β-SiC(001)

K. Kong, M. Han, H. W. Yeom, Y. Miyamoto, O. Sugino, T. Sasaki, T. Ohno, B. D. Yu

Research output: Contribution to journalArticlepeer-review

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The atomic processes for the growth of diamond were studied on a single crystalline β-SiC substrate in a hydrogen-free environment. All calculations were performed using the density functional theory (DFT), norm-conserving, fully separable pseudopotentials and a plane-wave basis with a cutoff energy of 40 Ry. The results show that among the isoelectronic group-V atoms, atomic species of a larger size acts as a better surfactant for the heteroepitaxial growth of diamond on β-SiC.

Original languageEnglish
Article number125504
Pages (from-to)1255041-1255044
Number of pages4
JournalPhysical Review Letters
Issue number12
StatePublished - 25 Mar 2002


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