Novel pathway to the growth of diamond on cubic β-SiC(001)

K. Kong; M. Han; H. W. Yeom; Y. Miyamoto; O. Sugino; T. Sasaki; T. Ohno; B. D. Yu

Novel pathway to the growth of diamond on cubic β-SiC(001)

K. Kong, M. Han, H. W. Yeom, Y. Miyamoto, O. Sugino, T. Sasaki, T. Ohno, B. D. Yu

Department of Physics

University of Seoul

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The atomic processes for the growth of diamond were studied on a single crystalline β-SiC substrate in a hydrogen-free environment. All calculations were performed using the density functional theory (DFT), norm-conserving, fully separable pseudopotentials and a plane-wave basis with a cutoff energy of 40 Ry. The results show that among the isoelectronic group-V atoms, atomic species of a larger size acts as a better surfactant for the heteroepitaxial growth of diamond on β-SiC.

Original language	English
Article number	125504
Pages (from-to)	1255041-1255044
Number of pages	4
Journal	Physical Review Letters
Volume	88
Issue number	12
State	Published - 25 Mar 2002

Cite this

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abstract = "The atomic processes for the growth of diamond were studied on a single crystalline β-SiC substrate in a hydrogen-free environment. All calculations were performed using the density functional theory (DFT), norm-conserving, fully separable pseudopotentials and a plane-wave basis with a cutoff energy of 40 Ry. The results show that among the isoelectronic group-V atoms, atomic species of a larger size acts as a better surfactant for the heteroepitaxial growth of diamond on β-SiC.",

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AU - Kong, K.

AU - Han, M.

AU - Yeom, H. W.

AU - Miyamoto, Y.

AU - Sugino, O.

AU - Sasaki, T.

AU - Ohno, T.

AU - Yu, B. D.

PY - 2002/3/25

Y1 - 2002/3/25

N2 - The atomic processes for the growth of diamond were studied on a single crystalline β-SiC substrate in a hydrogen-free environment. All calculations were performed using the density functional theory (DFT), norm-conserving, fully separable pseudopotentials and a plane-wave basis with a cutoff energy of 40 Ry. The results show that among the isoelectronic group-V atoms, atomic species of a larger size acts as a better surfactant for the heteroepitaxial growth of diamond on β-SiC.

AB - The atomic processes for the growth of diamond were studied on a single crystalline β-SiC substrate in a hydrogen-free environment. All calculations were performed using the density functional theory (DFT), norm-conserving, fully separable pseudopotentials and a plane-wave basis with a cutoff energy of 40 Ry. The results show that among the isoelectronic group-V atoms, atomic species of a larger size acts as a better surfactant for the heteroepitaxial growth of diamond on β-SiC.

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Novel pathway to the growth of diamond on cubic β-SiC(001)

Abstract

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