Novel Pathway to the Growth of Diamond on Cubic [Formula presented]-SiC(001)

K. Kong, M. Han, H. W. Yeom, Y. Miyamoto, O. Sugino, T. Sasaki, T. Ohno, B. D. Yu

Research output: Contribution to journalArticlepeer-review

Abstract

By carrying out first-principles calculations on diamond-forming processes, we predict a method for the heteroepitaxial growth of diamond on cubic [Formula presented]-SiC(001). In the method, we used two processes: (i) the preformation of an [Formula presented]-like surface configuration of [Formula presented]-SiC(001) by the adsorption of group-V surfactants; (ii) the successive growth of diamond by the segregation of the surfactants onto a surface and the desorption of surface hydrogen. Analyzing the segregation energies, we found that the atomic size effect plays a crucial role in the surfactant-mediated growth of diamond on [Formula presented]-SiC(001).

Original languageEnglish
Pages (from-to)4
Number of pages1
JournalPhysical Review Letters
Volume88
Issue number12
DOIs
StatePublished - 2002

Fingerprint

Dive into the research topics of 'Novel Pathway to the Growth of Diamond on Cubic [Formula presented]-SiC(001)'. Together they form a unique fingerprint.

Cite this