Abstract
By carrying out first-principles calculations on diamond-forming processes, we predict a method for the heteroepitaxial growth of diamond on cubic [Formula presented]-SiC(001). In the method, we used two processes: (i) the preformation of an [Formula presented]-like surface configuration of [Formula presented]-SiC(001) by the adsorption of group-V surfactants; (ii) the successive growth of diamond by the segregation of the surfactants onto a surface and the desorption of surface hydrogen. Analyzing the segregation energies, we found that the atomic size effect plays a crucial role in the surfactant-mediated growth of diamond on [Formula presented]-SiC(001).
Original language | English |
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Pages (from-to) | 4 |
Number of pages | 1 |
Journal | Physical Review Letters |
Volume | 88 |
Issue number | 12 |
DOIs | |
State | Published - 2002 |