Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

Dong Seok Song; Hyeok Kim; Premkumar Vincent; Joonku Hahn; Jaehoon Park; Jin Hyuk Bae

doi:10.1080/15421406.2016.1200357

Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

Dong Seok Song, Hyeok Kim, Premkumar Vincent, Joonku Hahn, Jaehoon Park, Jin Hyuk Bae

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.

Original language	English
Pages (from-to)	67-73
Number of pages	7
Journal	Molecular Crystals and Liquid Crystals
Volume	635
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2016.1200357
State	Published - 12 Aug 2016

Keywords

Electrode overlap
Numerical Study
Off-state features
Thin-film transistor

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10.1080/15421406.2016.1200357

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title = "Numerical study on off-current features in an organic transistor by controlling electrode-overlap area",

abstract = "We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.",

keywords = "Electrode overlap, Numerical Study, Off-state features, Thin-film transistor",

author = "Song, \{Dong Seok\} and Hyeok Kim and Premkumar Vincent and Joonku Hahn and Jaehoon Park and Bae, \{Jin Hyuk\}",

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AU - Song, Dong Seok

AU - Kim, Hyeok

AU - Vincent, Premkumar

AU - Hahn, Joonku

AU - Park, Jaehoon

AU - Bae, Jin Hyuk

PY - 2016/8/12

Y1 - 2016/8/12

N2 - We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.

AB - We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.

KW - Electrode overlap

KW - Numerical Study

KW - Off-state features

KW - Thin-film transistor

UR - https://www.scopus.com/pages/publications/84994222288

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DO - 10.1080/15421406.2016.1200357

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SP - 67

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JO - Molecular Crystals and Liquid Crystals

JF - Molecular Crystals and Liquid Crystals

IS - 1

ER -

Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

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Keywords

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