Observation of a quasi-1D Mott-Hubbard insulator: The re-entrant Na/Si(111)-3 × 1 surface

J. R. Ahn, N. D. Kim, S. S. Lee, K. D. Lee, B. D. Yu, D. Jeon, K. Kong, J. W. Chung

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Abstract

We have investigated the origin of a semiconducting phase of the re-entrant Na/Si(111)-3 × 1 surface formed by adding extra adatoms on the earlier 3 × 1 phase at 1/3 monolayers (MLs). The additional Na adatoms are found to form quasi one-dimensional (1D) atomic chains in our scanning tunnelling microscopy images while keeping the surface semiconducting. The unique features in our valence band and in high-resolution electron-energy-loss spectra suggest that the re-entrant 3 × 1 surface is a Mott-Hubbard type insulator. We thus report a novel quasi-1D insulator-insulator transition where electron-electron correlation plays a decisive role.

Original languageEnglish
Pages (from-to)859-865
Number of pages7
JournalEurophysics Letters
Volume57
Issue number6
DOIs
StatePublished - 2002

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