Observation of AlOx material in electrical resistive switching for nonvolatile random access memory application

Kyun Ho Jung; Seung Gon Song; Kyoung Wan Park; Jung Hyun Sok; Kyong Min Kim; Yun Sun Park

doi:10.3938/jkps.70.489

Observation of AlO_x material in electrical resistive switching for nonvolatile random access memory application

Kyun Ho Jung, Seung Gon Song, Kyoung Wan Park, Jung Hyun Sok, Kyong Min Kim, Yun Sun Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We fabricated an Al / AlO_x / Al device by using a RF magnetron sputter system. The device showed a unipolar resistive switching process. In this study, the switching mechanism of the device followed the conductive filament model. The conduction mechanisms for the conductive filament model were explained by using Ohmic conduction for the low resistance state (LRS) and Schottky emission for the high resistance state (HRS). The average value of the resistance ratio between the HRS and the LRS was about 3.48 × 10⁷ when the reading voltage (0.1 V) was achieved. The electrical property of the endurance was achieved under 50 switching cycles. A low switching voltage could be obtained for a low power consuming device. These results proved that the AlO_x material has various possibilities for use in nonvolatile random access memory applications.

Original language	English
Pages (from-to)	489-493
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	70
Issue number	5
DOIs	https://doi.org/10.3938/jkps.70.489
State	Published - 1 Mar 2017

Keywords

AlO
Conductive filament model
Nonvolatile resistive random access memory
Unipolar resistive switching

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10.3938/jkps.70.489

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title = "Observation of AlOx material in electrical resistive switching for nonvolatile random access memory application",

abstract = "We fabricated an Al / AlOx / Al device by using a RF magnetron sputter system. The device showed a unipolar resistive switching process. In this study, the switching mechanism of the device followed the conductive filament model. The conduction mechanisms for the conductive filament model were explained by using Ohmic conduction for the low resistance state (LRS) and Schottky emission for the high resistance state (HRS). The average value of the resistance ratio between the HRS and the LRS was about 3.48 × 107 when the reading voltage (0.1 V) was achieved. The electrical property of the endurance was achieved under 50 switching cycles. A low switching voltage could be obtained for a low power consuming device. These results proved that the AlOx material has various possibilities for use in nonvolatile random access memory applications.",

keywords = "AlO, Conductive filament model, Nonvolatile resistive random access memory, Unipolar resistive switching",

author = "Jung, {Kyun Ho} and Song, {Seung Gon} and Park, {Kyoung Wan} and Sok, {Jung Hyun} and Kim, {Kyong Min} and Park, {Yun Sun}",

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AU - Jung, Kyun Ho

AU - Song, Seung Gon

AU - Park, Kyoung Wan

AU - Sok, Jung Hyun

AU - Kim, Kyong Min

AU - Park, Yun Sun

PY - 2017/3/1

Y1 - 2017/3/1

N2 - We fabricated an Al / AlOx / Al device by using a RF magnetron sputter system. The device showed a unipolar resistive switching process. In this study, the switching mechanism of the device followed the conductive filament model. The conduction mechanisms for the conductive filament model were explained by using Ohmic conduction for the low resistance state (LRS) and Schottky emission for the high resistance state (HRS). The average value of the resistance ratio between the HRS and the LRS was about 3.48 × 107 when the reading voltage (0.1 V) was achieved. The electrical property of the endurance was achieved under 50 switching cycles. A low switching voltage could be obtained for a low power consuming device. These results proved that the AlOx material has various possibilities for use in nonvolatile random access memory applications.

AB - We fabricated an Al / AlOx / Al device by using a RF magnetron sputter system. The device showed a unipolar resistive switching process. In this study, the switching mechanism of the device followed the conductive filament model. The conduction mechanisms for the conductive filament model were explained by using Ohmic conduction for the low resistance state (LRS) and Schottky emission for the high resistance state (HRS). The average value of the resistance ratio between the HRS and the LRS was about 3.48 × 107 when the reading voltage (0.1 V) was achieved. The electrical property of the endurance was achieved under 50 switching cycles. A low switching voltage could be obtained for a low power consuming device. These results proved that the AlOx material has various possibilities for use in nonvolatile random access memory applications.

KW - AlO

KW - Conductive filament model

KW - Nonvolatile resistive random access memory

KW - Unipolar resistive switching

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Observation of AlO_x material in electrical resistive switching for nonvolatile random access memory application

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Keywords

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