Abstract
A CuPt-type ordered structure in CdZnTe has been observed in HgCdTe/CdxZn1-xTe/GaAs grown by interdiffused multilayer processing. Selected area electron diffraction and cross-sectional, high-resolution transmission electron microscopy have been employed to identify the ordered structure in CdZnTe. Selected area electron diffraction patterns showed two sets of {1/2 1/2 1/2} extra spots with symmetrical intensity through [110] projection, but no extra spots through [110] projection. In the [110] projection, high-resolution images of ordered CdZnTe showed the doubling periodicity along [111] or [111] through [110] projection. It was determined that the two variants of CuPt-type ordered CdZnTe were formed on (111) or (111) through [110] projection. The two variants were observed with almost equal probability and had similar domain structures.
| Original language | English |
|---|---|
| Pages (from-to) | L21-L23 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 37 |
| Issue number | 1 PART A/B |
| DOIs | |
| State | Published - 15 Jan 1998 |
Keywords
- Cadmium zinc telluride
- CuPt-type ordering
- Interdiffused multilayer processing
- Organometallic vapor phase epitaxy