One-dimensional ordered structure of C 2H 4 on a Si(001) surface

J. H. Seo, J. Y. Park, C. N. Whang, K. H. Yoo, S. S. Kim, D. S. Choi, K. H. Chae

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A one-dimensional (1-D) ordered structure of ethylene (C 2H 4) molecules on a Si(001) surface has been investigated by using coaxial impact collision ion scattering spectroscopy (CAICISS) and computer simulations. In a previous paper, the di-σ on-top site of the Si(001)-(2 × 1) surface was exposed at room temperature (RT) to 100L (1L = 10 -6 Torr·sec)of C 2H 4 molecules, which were intially absorbed on that surface. With increasing number of C 2H 4 molecules, a structural change of C 2H 4/Si(001)-(2 × 1) surface was observed by using the low-energy electron diffraction (LEED). When the Si(001)-(2 × 1) surface at RT to 200L of C 2H 4 molecules, the C 2H 4 molecules occupied the di-ff on-top site on the Si(001)-(2 × 1) surface. With the help of a computer simulation, the C-C and Si-C bond lengths were found to be 1.61 × 0.05 Å and 1.81 ± 0.05 Å respectively. The C 2H 4 molecules were also found to be adsorbed on the Si(001) surface on in tandem along the direction of Si dimer-rows. This result provides evidence supporting the mechanism of 1-D nano-structure formation based on the C 2H 4 molecules on Si(001) surface.

Original languageEnglish
Pages (from-to)167-171
Number of pages5
JournalJournal of the Korean Physical Society
Volume49
Issue number1
StatePublished - Jul 2006

Keywords

  • Adsorption
  • Ethylene
  • Low energy ion scattering (LEIS)
  • Low-energy electron diffraction (LEED)
  • Silicon
  • Surface structure

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