Optical and electrical properties of monolayer ReS₂ developed via chemical vapor deposition on SiO₂/Si substrate

In recent years, two-dimensional transition metal dichalcogenides (TMDs) have been attracted promising candidates for imminent electrical and optical device applications owing to their remarkable properties and unique structures. In this study, we report the optical and electrical characteristics of the newest member of the TMD family, i.e. monolayer of rhenium disulfide (ReS₂) field effect transistor on a SiO₂/Si substrate developed using the chemical vapor deposition technique. The quality of the as-grown monolayer of ReS₂ was evaluated through Raman spectroscopy, whereas the surface elemental composition was analyzed thorough X-ray photoelectron spectroscopy. The optical properties of this monolayer TMD were analyzed using photoluminescence spectroscopy, and the contact resistance between the as-grown semiconducting monolayer and the metal electrodes was examined using the transmission line modeling method. Ti/Au electrodes form an excellent ohmic contact with the monolayers of the ReS₂ film. The electron mobility of the monolayer ReS₂ FETs fabricated through transmission line patterning was investigated at room temperature (300 K) and found to be 2.91×10^–2 cm² V⁻¹ s⁻¹ whereas the on/off ratio of the device was 9.8 × 10².