Optical anisotropy in InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation

S. H. Park, D. Ahn, J. E. Oh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2008
PublisherOptical Society of America
ISBN (Print)9781557528599
StatePublished - 2008
EventConference on Lasers and Electro-Optics, CLEO 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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