Abstract
We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics, CLEO 2008 |
Publisher | Optical Society of America |
ISBN (Print) | 9781557528599 |
State | Published - 2008 |
Event | Conference on Lasers and Electro-Optics, CLEO 2008 - San Jose, CA, United States Duration: 4 May 2008 → 9 May 2008 |
Publication series
Name | Optics InfoBase Conference Papers |
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ISSN (Electronic) | 2162-2701 |
Conference
Conference | Conference on Lasers and Electro-Optics, CLEO 2008 |
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Country/Territory | United States |
City | San Jose, CA |
Period | 4/05/08 → 9/05/08 |