Optical anisotropy in InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation

S. H. Park, D. Ahn, J. E. Oh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.

Original languageEnglish
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Conference

ConferenceConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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