Optical anisotropy in InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation

S. H. Park, D. Ahn, J. E. Oh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2008
PublisherOptical Society of America
ISBN (Print)9781557528599
StatePublished - 2008
EventQuantum Electronics and Laser Science Conference, QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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