Optical emission characteristics of pseudopolarization-matched green AlInGaN/InGaN quantum well structures

Seoung Hwan Park; Doyeol Ahn

doi:10.1109/JSTQE.2013.2241024

Optical emission characteristics of pseudopolarization-matched green AlInGaN/InGaN quantum well structures

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well structures with a quaternary AlInGaN well layer were investigated by using non-Markovian gain model with many-body effects. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive to the In composition in the InGaN barrier. The spontaneous emission coefficient shows a maximum at In composition of 0.22 in the barrier and gradually decreases with increasing In composition. The spontaneous emission coefficient of the AlInGaN/InGaN system with reduced internal field is shown to be increased by 70% compared to that of the conventional InGaN/GaN system. B_eff of the AlInGaN/InGaN QW structure is much larger than that of the InGaN/GaN QW structure in the investigated range of the current density.

Original language	English
Article number	6449278
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	19
Issue number	5
DOIs	https://doi.org/10.1109/JSTQE.2013.2241024
State	Published - 2013

Keywords

AlInGaN
GaN
InGaN
laser
optical gain
quantum well (QW)

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10.1109/JSTQE.2013.2241024

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title = "Optical emission characteristics of pseudopolarization-matched green AlInGaN/InGaN quantum well structures",

abstract = "Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well structures with a quaternary AlInGaN well layer were investigated by using non-Markovian gain model with many-body effects. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive to the In composition in the InGaN barrier. The spontaneous emission coefficient shows a maximum at In composition of 0.22 in the barrier and gradually decreases with increasing In composition. The spontaneous emission coefficient of the AlInGaN/InGaN system with reduced internal field is shown to be increased by 70% compared to that of the conventional InGaN/GaN system. Beff of the AlInGaN/InGaN QW structure is much larger than that of the InGaN/GaN QW structure in the investigated range of the current density.",

keywords = "AlInGaN, GaN, InGaN, laser, optical gain, quantum well (QW)",

author = "Park, {Seoung Hwan} and Doyeol Ahn",

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doi = "10.1109/JSTQE.2013.2241024",

language = "English",

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TY - JOUR

T1 - Optical emission characteristics of pseudopolarization-matched green AlInGaN/InGaN quantum well structures

AU - Park, Seoung Hwan

AU - Ahn, Doyeol

PY - 2013

Y1 - 2013

N2 - Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well structures with a quaternary AlInGaN well layer were investigated by using non-Markovian gain model with many-body effects. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive to the In composition in the InGaN barrier. The spontaneous emission coefficient shows a maximum at In composition of 0.22 in the barrier and gradually decreases with increasing In composition. The spontaneous emission coefficient of the AlInGaN/InGaN system with reduced internal field is shown to be increased by 70% compared to that of the conventional InGaN/GaN system. Beff of the AlInGaN/InGaN QW structure is much larger than that of the InGaN/GaN QW structure in the investigated range of the current density.

AB - Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well structures with a quaternary AlInGaN well layer were investigated by using non-Markovian gain model with many-body effects. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive to the In composition in the InGaN barrier. The spontaneous emission coefficient shows a maximum at In composition of 0.22 in the barrier and gradually decreases with increasing In composition. The spontaneous emission coefficient of the AlInGaN/InGaN system with reduced internal field is shown to be increased by 70% compared to that of the conventional InGaN/GaN system. Beff of the AlInGaN/InGaN QW structure is much larger than that of the InGaN/GaN QW structure in the investigated range of the current density.

KW - AlInGaN

KW - GaN

KW - InGaN

KW - laser

KW - optical gain

KW - quantum well (QW)

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U2 - 10.1109/JSTQE.2013.2241024

DO - 10.1109/JSTQE.2013.2241024

M3 - Article

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SN - 1077-260X

VL - 19

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 5

M1 - 6449278

ER -

Optical emission characteristics of pseudopolarization-matched green AlInGaN/InGaN quantum well structures

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