Optical gain in wurtzite ZnO/ZnMgO quantum well lasers

Seoung Hwan Park, Kwang Joo Kim, Sam Nyung Yi, Doyeol Ahn, Seung Joo Lee

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The optical gain of wurtzite ZnO/ZnMgO quantum well (QW) lasers is investigated using the non-Markovian gain model with many-body effects. The results are compared with those of GaN/AlGaN QW lasers. The ZnO/ZnMgO QW lasers are found to have a much larger optical gain than the GaN/AlGaN QW lasers for a given sheet carrier density. This is mainly attributed to the fact that the average hole effective mass and the transition matrix element of ZnO/ZnMgO QW lasers are smaller and larger than those of GaN/AlGaN QW lasers, respectively. Also, the radiative current density contribution to the threshold current density of ZnO/ZnMgO QW lasers is expected to be markedly reduced compared with that of the GaN/AlGaN QW lasers if a large threshold carrier density (> 3 × 1019 cm-3) is required for both systems. These results show that ZnO-based QW lasers are promising candidates for optoelectric applications in visible and UV regions.

Original languageEnglish
Pages (from-to)L1403-L1406
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number46-49
StatePublished - 25 Nov 2005


  • AlGaN
  • GaN
  • Laser
  • Optical gain
  • Quantum well
  • ZnMgO
  • ZnO
  • ZnO/ZnMgO


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