Optical gain of strained-layer hexagonal and cubic GaN quantum well lasers

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Abstract

The optical gains of strained-layer hexagonal and cubic GaN quantum wells are calculated within the multiband effective mass approximation. The 6 × 6 multiband effective-mass Hamiltonians are used to calculate the band structures of hexagonal and cubic quantum wells. Non-Markovian relaxation is taken into account in the optical gain calculation. Calculated results show that the optical gains of the cubic quantum well are larger in magnitudes than those of the hexagonal GaN quantum well over the wide range of carrier densities. The expected inferior performance of the wurzite quantum-well laser as compared with the cubic structure is mainly due to the heavier effective mass of the HH1 band of the former at the zone center.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages117-128
Number of pages12
ISBN (Print)0819424056
StatePublished - 1997
EventPhysics and Simulation of Optoelectronic Devices V - San Jose, CA, USA
Duration: 10 Feb 199714 Feb 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2994
ISSN (Print)0277-786X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices V
CitySan Jose, CA, USA
Period10/02/9714/02/97

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