Optical properties of silicon oxide (SiOx, x<2) thin films deposited by PECVD technique

Youngill Kim, Byoung Youl Park, Eunkyeom Kim, Munsup Han, Junghyun Sok, Kyoungwan Park

Research output: Contribution to journalArticlepeer-review

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Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of SiH4 and N2O source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of 900° or after 1 hour annealing at 970°C. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above 700°C or after 1 hour annealing at 700°. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based fight source for Si-optoelectronic integrated circuits and/or display devices.

Original languageEnglish
Pages (from-to)732-738
Number of pages7
JournalJournal of Korean Institute of Metals and Materials
Issue number9
StatePublished - Sep 2011


  • Atomic force microscopy
  • Optical properties
  • Oxides
  • Photoluminescence
  • Plasma deposition


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