Optical sensitivity of P-I-N diodes using silicon nano-clusters embedded in silicon rich silicon nitride films

Kyoung Min Lee, Jae Dam Hwang, Youn Jin Lee, Kil Sun No, Ki Su Keum, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have investigated the optical sensitivity on electrical properties of silicon-rich silicon nitride films for photo sensor application. The silicon-rich silicon nitride films were prepared by catalytic chemical vapor deposition technique at substrate temperature below 200 °C. Silicon nano-clusters inside there films were observed by measurement of transmission electron microscope. P-i-n diodes were fabricated by using p-type silicon wafer, intrinsic silicon-rich silicon nitride films, and n-type silicon films. Photo/dark currents of the p-i-n diodes were measured at reverse bias. Photo/dark current ratios were controlled by variation of mixture ratios in source gas of the intrinsic silicon-rich silicon nitride films.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages836-837
Number of pages2
StatePublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

Keywords

  • Low temperature process
  • Silicon based photo sensor
  • Silicon nanocrystals

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