Optimization of cascode configuration in CMOS low-noise amplifier

Ickhyun Song; Minsuk Koo; Hakchul Jung; Hee Sauk Jhon; Hyungcheol Shin

doi:10.1002/mop.23163

Optimization of cascode configuration in CMOS low-noise amplifier

Ickhyun Song, Minsuk Koo, Hakchul Jung, Hee Sauk Jhon, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this paper, design consideration of the cascode configuration in low-noise amplifiers (LNA) using 0.13-μm CMOS technology is presented. Performance factors of LNAs such as signal power gain, noise factor, and power consumption are analytically expressed in device parameters from its small-signal equivalent circuit. The effect of the common-gate transistor in each performance factor is evaluated at the target frequency of 17-GHz ISM band At this frequency, power gain and noise factor are degraded, which result from the common-gate transistor. Figure of merit of LNAs is also optimized.

Original language	English
Pages (from-to)	646-649
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	50
Issue number	3
DOIs	https://doi.org/10.1002/mop.23163
State	Published - Mar 2008

Keywords

CMOS
Cascode
Figure of merit (FoM)
Low-noise amplifier (LNA)
Noise figure

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10.1002/mop.23163

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title = "Optimization of cascode configuration in CMOS low-noise amplifier",

abstract = "In this paper, design consideration of the cascode configuration in low-noise amplifiers (LNA) using 0.13-μm CMOS technology is presented. Performance factors of LNAs such as signal power gain, noise factor, and power consumption are analytically expressed in device parameters from its small-signal equivalent circuit. The effect of the common-gate transistor in each performance factor is evaluated at the target frequency of 17-GHz ISM band At this frequency, power gain and noise factor are degraded, which result from the common-gate transistor. Figure of merit of LNAs is also optimized.",

keywords = "CMOS, Cascode, Figure of merit (FoM), Low-noise amplifier (LNA), Noise figure",

author = "Ickhyun Song and Minsuk Koo and Hakchul Jung and Jhon, \{Hee Sauk\} and Hyungcheol Shin",

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AU - Song, Ickhyun

AU - Koo, Minsuk

AU - Jung, Hakchul

AU - Jhon, Hee Sauk

AU - Shin, Hyungcheol

PY - 2008/3

Y1 - 2008/3

N2 - In this paper, design consideration of the cascode configuration in low-noise amplifiers (LNA) using 0.13-μm CMOS technology is presented. Performance factors of LNAs such as signal power gain, noise factor, and power consumption are analytically expressed in device parameters from its small-signal equivalent circuit. The effect of the common-gate transistor in each performance factor is evaluated at the target frequency of 17-GHz ISM band At this frequency, power gain and noise factor are degraded, which result from the common-gate transistor. Figure of merit of LNAs is also optimized.

AB - In this paper, design consideration of the cascode configuration in low-noise amplifiers (LNA) using 0.13-μm CMOS technology is presented. Performance factors of LNAs such as signal power gain, noise factor, and power consumption are analytically expressed in device parameters from its small-signal equivalent circuit. The effect of the common-gate transistor in each performance factor is evaluated at the target frequency of 17-GHz ISM band At this frequency, power gain and noise factor are degraded, which result from the common-gate transistor. Figure of merit of LNAs is also optimized.

KW - CMOS

KW - Cascode

KW - Figure of merit (FoM)

KW - Low-noise amplifier (LNA)

KW - Noise figure

UR - https://www.scopus.com/pages/publications/39849097368

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

Optimization of cascode configuration in CMOS low-noise amplifier

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Keywords

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