Optimization of read operation for low power consumption in 3D NAND flash memory

Jesun Park; Seongwoo Kim; Taeyoung Cho; Myounggon Kang

doi:10.1016/j.mee.2025.112324

Optimization of read operation for low power consumption in 3D NAND flash memory

Jesun Park
, Seongwoo Kim
, Taeyoung Cho
, Myounggon Kang

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

Abstract

This study proposes a low power read operation to minimize the hot carrier injection (HCI) phenomenon that occurs during read operations in 3D NAND Flash Memory. Owing to the characteristics of the 3D NAND Flash Memory structure, the channels of unselected strings can easily remain in a floating state. This leads to HCI during read operations, resulting in read disturbances. To improve the read disturb characteristics, triangular pulse voltages (V_TP) with adjusted slopes and delayed application times were applied to the string selected line (SSL) and the ground selected line (GSL) during read operations. Using the proposed read scheme, it was confirmed that HCI was decreased compared to the conventional method, and it was possible to operate at low power.

Original language	English
Article number	112324
Journal	Microelectronic Engineering
Volume	298
DOIs	https://doi.org/10.1016/j.mee.2025.112324
State	Published - 1 Jun 2025

Keywords

3D NAND flash memory
Channel boosting
Channel potential
Hot carrier injection (HCI)
Read disturbance

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10.1016/j.mee.2025.112324

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title = "Optimization of read operation for low power consumption in 3D NAND flash memory",

abstract = "This study proposes a low power read operation to minimize the hot carrier injection (HCI) phenomenon that occurs during read operations in 3D NAND Flash Memory. Owing to the characteristics of the 3D NAND Flash Memory structure, the channels of unselected strings can easily remain in a floating state. This leads to HCI during read operations, resulting in read disturbances. To improve the read disturb characteristics, triangular pulse voltages (VTP) with adjusted slopes and delayed application times were applied to the string selected line (SSL) and the ground selected line (GSL) during read operations. Using the proposed read scheme, it was confirmed that HCI was decreased compared to the conventional method, and it was possible to operate at low power.",

keywords = "3D NAND flash memory, Channel boosting, Channel potential, Hot carrier injection (HCI), Read disturbance",

author = "Jesun Park and Seongwoo Kim and Taeyoung Cho and Myounggon Kang",

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year = "2025",

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doi = "10.1016/j.mee.2025.112324",

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TY - JOUR

T1 - Optimization of read operation for low power consumption in 3D NAND flash memory

AU - Park, Jesun

AU - Kim, Seongwoo

AU - Cho, Taeyoung

AU - Kang, Myounggon

PY - 2025/6/1

Y1 - 2025/6/1

N2 - This study proposes a low power read operation to minimize the hot carrier injection (HCI) phenomenon that occurs during read operations in 3D NAND Flash Memory. Owing to the characteristics of the 3D NAND Flash Memory structure, the channels of unselected strings can easily remain in a floating state. This leads to HCI during read operations, resulting in read disturbances. To improve the read disturb characteristics, triangular pulse voltages (VTP) with adjusted slopes and delayed application times were applied to the string selected line (SSL) and the ground selected line (GSL) during read operations. Using the proposed read scheme, it was confirmed that HCI was decreased compared to the conventional method, and it was possible to operate at low power.

AB - This study proposes a low power read operation to minimize the hot carrier injection (HCI) phenomenon that occurs during read operations in 3D NAND Flash Memory. Owing to the characteristics of the 3D NAND Flash Memory structure, the channels of unselected strings can easily remain in a floating state. This leads to HCI during read operations, resulting in read disturbances. To improve the read disturb characteristics, triangular pulse voltages (VTP) with adjusted slopes and delayed application times were applied to the string selected line (SSL) and the ground selected line (GSL) during read operations. Using the proposed read scheme, it was confirmed that HCI was decreased compared to the conventional method, and it was possible to operate at low power.

KW - 3D NAND flash memory

KW - Channel boosting

KW - Channel potential

KW - Hot carrier injection (HCI)

KW - Read disturbance

UR - https://www.scopus.com/pages/publications/85218355504

U2 - 10.1016/j.mee.2025.112324

DO - 10.1016/j.mee.2025.112324

M3 - Article

AN - SCOPUS:85218355504

SN - 0167-9317

VL - 298

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 112324

ER -

Optimization of read operation for low power consumption in 3D NAND flash memory

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