Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices

A hybrid fabrication technique is reported that relies on photolithography plus mechanical peel-off and enables, for the first time, the patterning of positive and negative charges spatially on n- and p-type organic field effect transistors, respectively, on the same wafer. Using the proposed fabrication and threshold adjusting technique, the first organic FET-based CMOS inverter has been fabricated that employs threshold adjustment for both p- and n-type transistors to bias them so that the inverter has maximum gain.