Orbital quantum bit in Si quantum dots

D. Ahn, S. W. Hwnag

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, current status of experimental and theoretical work on quantum bits based on the semiconductor quantum dots in the University of Seoul will be presented. A new proposal utilizing the multi-valley quantum state transitions in a Si quantum dot as a possible candidate for a quantum bit with a long decoherence time will be also given. Qubits are the multi-valley symmetric and anti-symmetric orbitais. Evolution of these orbitais is controlled by an external electric field, which turns on and off the inter-valley interactions. Initialization is achieved by turning on the inter-valley Hamiltonian to let the system settle down to the symmetric orbital state. Estimates of the decoherence time is made for the longitudinal acoustic phonon process.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages104-107
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 22 Oct 200625 Oct 2006

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Conference

Conference2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/TerritoryKorea, Republic of
CityGyeongju
Period22/10/0625/10/06

Keywords

  • Inter-valley interactions
  • Obital quantum bits
  • Si quantum dots

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