Organic thin-film transistors based on αω-dihexyldithienyl- dihydrophenanthrene

Nam Sung Cho, Shinuk Cho, Mark Elbing, Jae Kwan Lee, Renqiang Yang, Jung Hwa Seo, Kwanghee Lee, Guillermo C. Bazan, Alan J. Heeger

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The facile synthesis of an organic semiconductor to fabricate the thin-film transistors (TFTs), was reported. A new semiconductor 2,7-bis-(5'-hexyl-2,2'- bithien-5-yl)-9,10-dihydro-phenanthrene (HT-PT) was used to prepare organic TFTs. It was observed that the TFT devices with HT-PT as semiconducting layer show hole mobilities. HT-PT synthesized by using the palladium-catalyzed Suzuki cross-coupling reaction. The thin films deposited on Si/SiO2 substrates. The differential scanning calorimetry (DSC) was used to investigate the thermal properties of the HT-PT. Atomic force microscopy (AFM) analysis of surface properties revealed that the thin-film morphologies has uniformly arranged grains. The study found that the changes in the composition of the molecular components can change the electronic properties of the bulk materials.

Original languageEnglish
Pages (from-to)6289-6291
Number of pages3
JournalChemistry of Materials
Issue number20
StatePublished - 28 Oct 2008


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