Organic thin-film transistors based on αω-dihexyldithienyl- dihydrophenanthrene

Nam Sung Cho; Shinuk Cho; Mark Elbing; Jae Kwan Lee; Renqiang Yang; Jung Hwa Seo; Kwanghee Lee; Guillermo C. Bazan; Alan J. Heeger

doi:10.1021/cm801601r

Organic thin-film transistors based on αω-dihexyldithienyl- dihydrophenanthrene

Nam Sung Cho, Shinuk Cho, Mark Elbing, Jae Kwan Lee, Renqiang Yang, Jung Hwa Seo, Kwanghee Lee, Guillermo C. Bazan, Alan J. Heeger

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The facile synthesis of an organic semiconductor to fabricate the thin-film transistors (TFTs), was reported. A new semiconductor 2,7-bis-(5'-hexyl-2,2'- bithien-5-yl)-9,10-dihydro-phenanthrene (HT-PT) was used to prepare organic TFTs. It was observed that the TFT devices with HT-PT as semiconducting layer show hole mobilities. HT-PT synthesized by using the palladium-catalyzed Suzuki cross-coupling reaction. The thin films deposited on Si/SiO₂ substrates. The differential scanning calorimetry (DSC) was used to investigate the thermal properties of the HT-PT. Atomic force microscopy (AFM) analysis of surface properties revealed that the thin-film morphologies has uniformly arranged grains. The study found that the changes in the composition of the molecular components can change the electronic properties of the bulk materials.

Original language	English
Pages (from-to)	6289-6291
Number of pages	3
Journal	Chemistry of Materials
Volume	20
Issue number	20
DOIs	https://doi.org/10.1021/cm801601r
State	Published - 28 Oct 2008

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title = "Organic thin-film transistors based on αω-dihexyldithienyl- dihydrophenanthrene",

abstract = "The facile synthesis of an organic semiconductor to fabricate the thin-film transistors (TFTs), was reported. A new semiconductor 2,7-bis-(5'-hexyl-2,2'- bithien-5-yl)-9,10-dihydro-phenanthrene (HT-PT) was used to prepare organic TFTs. It was observed that the TFT devices with HT-PT as semiconducting layer show hole mobilities. HT-PT synthesized by using the palladium-catalyzed Suzuki cross-coupling reaction. The thin films deposited on Si/SiO2 substrates. The differential scanning calorimetry (DSC) was used to investigate the thermal properties of the HT-PT. Atomic force microscopy (AFM) analysis of surface properties revealed that the thin-film morphologies has uniformly arranged grains. The study found that the changes in the composition of the molecular components can change the electronic properties of the bulk materials.",

author = "Cho, {Nam Sung} and Shinuk Cho and Mark Elbing and Lee, {Jae Kwan} and Renqiang Yang and Seo, {Jung Hwa} and Kwanghee Lee and Bazan, {Guillermo C.} and Heeger, {Alan J.}",

year = "2008",

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doi = "10.1021/cm801601r",

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T1 - Organic thin-film transistors based on αω-dihexyldithienyl- dihydrophenanthrene

AU - Cho, Nam Sung

AU - Cho, Shinuk

AU - Elbing, Mark

AU - Lee, Jae Kwan

AU - Yang, Renqiang

AU - Seo, Jung Hwa

AU - Lee, Kwanghee

AU - Bazan, Guillermo C.

AU - Heeger, Alan J.

PY - 2008/10/28

Y1 - 2008/10/28

N2 - The facile synthesis of an organic semiconductor to fabricate the thin-film transistors (TFTs), was reported. A new semiconductor 2,7-bis-(5'-hexyl-2,2'- bithien-5-yl)-9,10-dihydro-phenanthrene (HT-PT) was used to prepare organic TFTs. It was observed that the TFT devices with HT-PT as semiconducting layer show hole mobilities. HT-PT synthesized by using the palladium-catalyzed Suzuki cross-coupling reaction. The thin films deposited on Si/SiO2 substrates. The differential scanning calorimetry (DSC) was used to investigate the thermal properties of the HT-PT. Atomic force microscopy (AFM) analysis of surface properties revealed that the thin-film morphologies has uniformly arranged grains. The study found that the changes in the composition of the molecular components can change the electronic properties of the bulk materials.

AB - The facile synthesis of an organic semiconductor to fabricate the thin-film transistors (TFTs), was reported. A new semiconductor 2,7-bis-(5'-hexyl-2,2'- bithien-5-yl)-9,10-dihydro-phenanthrene (HT-PT) was used to prepare organic TFTs. It was observed that the TFT devices with HT-PT as semiconducting layer show hole mobilities. HT-PT synthesized by using the palladium-catalyzed Suzuki cross-coupling reaction. The thin films deposited on Si/SiO2 substrates. The differential scanning calorimetry (DSC) was used to investigate the thermal properties of the HT-PT. Atomic force microscopy (AFM) analysis of surface properties revealed that the thin-film morphologies has uniformly arranged grains. The study found that the changes in the composition of the molecular components can change the electronic properties of the bulk materials.

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U2 - 10.1021/cm801601r

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JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 20

ER -

Organic thin-film transistors based on αω-dihexyldithienyl- dihydrophenanthrene

Abstract

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