Orientation control of (Bi,La)4Ti3O12 thin films derived by sol-gel method

B. E. Park; C. J. Kim; H. Ishiwara

doi:10.1080/00150190590966045

Orientation control of (Bi,La)₄Ti₃O₁₂ thin films derived by sol-gel method

B. E. Park, C. J. Kim, H. Ishiwara

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

BLT ((Bi,La)₄Ti₃O₁₂) thin films with (117)- and (001)-preferred orientation were fabricated on Pt/Ti/SiO ²/Si(100) substrates by a sol-gel method. Films were annealed in O₂ ambient at 750°C for 30 min to crystallize material. In this crystallization process, the temperature heating rate was changed from 0.5°C/sec to 3000°C/sec. It was shown from XRD and XRD reciprocal space mappings analyses that the BLT films with (117)-preferred orientation were formed at lower temperature rate, while the films with c-axis preferred orientation were formed at higher healing rate. The remanent polarization (2P_r) values of the BLT films with (117)- and (001)-preferred orientation were 36 and 10 μC/cm², respectively. SEM showed that the (117)-oriented BLT films are composed of peg-like small grains. On the other hand, large platelet-like grains were found in (001)-oriented BLT films.

Original language	English
Pages (from-to)	67-73
Number of pages	7
Journal	Ferroelectrics
Volume	318
DOIs	https://doi.org/10.1080/00150190590966045
State	Published - 2005

Keywords

(Bi,La)TiO
FeRAM
Orientation
Sol-gel
Thin film

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@article{94699b49a2d24d99a15cba9984128b25,

title = "Orientation control of (Bi,La)4Ti3O12 thin films derived by sol-gel method",

abstract = "BLT ((Bi,La)4Ti3O12) thin films with (117)- and (001)-preferred orientation were fabricated on Pt/Ti/SiO 2/Si(100) substrates by a sol-gel method. Films were annealed in O2 ambient at 750°C for 30 min to crystallize material. In this crystallization process, the temperature heating rate was changed from 0.5°C/sec to 3000°C/sec. It was shown from XRD and XRD reciprocal space mappings analyses that the BLT films with (117)-preferred orientation were formed at lower temperature rate, while the films with c-axis preferred orientation were formed at higher healing rate. The remanent polarization (2Pr) values of the BLT films with (117)- and (001)-preferred orientation were 36 and 10 μC/cm2, respectively. SEM showed that the (117)-oriented BLT films are composed of peg-like small grains. On the other hand, large platelet-like grains were found in (001)-oriented BLT films.",

keywords = "(Bi,La)TiO, FeRAM, Orientation, Sol-gel, Thin film",

author = "Park, {B. E.} and Kim, {C. J.} and H. Ishiwara",

year = "2005",

doi = "10.1080/00150190590966045",

language = "English",

volume = "318",

pages = "67--73",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - Orientation control of (Bi,La)4Ti3O12 thin films derived by sol-gel method

AU - Park, B. E.

AU - Kim, C. J.

AU - Ishiwara, H.

PY - 2005

Y1 - 2005

N2 - BLT ((Bi,La)4Ti3O12) thin films with (117)- and (001)-preferred orientation were fabricated on Pt/Ti/SiO 2/Si(100) substrates by a sol-gel method. Films were annealed in O2 ambient at 750°C for 30 min to crystallize material. In this crystallization process, the temperature heating rate was changed from 0.5°C/sec to 3000°C/sec. It was shown from XRD and XRD reciprocal space mappings analyses that the BLT films with (117)-preferred orientation were formed at lower temperature rate, while the films with c-axis preferred orientation were formed at higher healing rate. The remanent polarization (2Pr) values of the BLT films with (117)- and (001)-preferred orientation were 36 and 10 μC/cm2, respectively. SEM showed that the (117)-oriented BLT films are composed of peg-like small grains. On the other hand, large platelet-like grains were found in (001)-oriented BLT films.

AB - BLT ((Bi,La)4Ti3O12) thin films with (117)- and (001)-preferred orientation were fabricated on Pt/Ti/SiO 2/Si(100) substrates by a sol-gel method. Films were annealed in O2 ambient at 750°C for 30 min to crystallize material. In this crystallization process, the temperature heating rate was changed from 0.5°C/sec to 3000°C/sec. It was shown from XRD and XRD reciprocal space mappings analyses that the BLT films with (117)-preferred orientation were formed at lower temperature rate, while the films with c-axis preferred orientation were formed at higher healing rate. The remanent polarization (2Pr) values of the BLT films with (117)- and (001)-preferred orientation were 36 and 10 μC/cm2, respectively. SEM showed that the (117)-oriented BLT films are composed of peg-like small grains. On the other hand, large platelet-like grains were found in (001)-oriented BLT films.

KW - (Bi,La)TiO

KW - FeRAM

KW - Orientation

KW - Sol-gel

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=33751297334&partnerID=8YFLogxK

U2 - 10.1080/00150190590966045

DO - 10.1080/00150190590966045

M3 - Article

AN - SCOPUS:33751297334

SN - 0015-0193

VL - 318

SP - 67

EP - 73

JO - Ferroelectrics

JF - Ferroelectrics

ER -

Orientation control of (Bi,La)₄Ti₃O₁₂ thin films derived by sol-gel method

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Keywords

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