Overshoot dynamics in GaAs observed using THz radiation

T. B. Norris, J. Son

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

THz electromagnetic radiation emitted by accelerating electrons is used as to probe the transport dynamics of carriers in semiconductor devices. Velocity overshoot is directly observed in GaAs up to extremely high fields (200kV/cm).

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PublisherPubl by IEEE
Pages810
Number of pages1
ISBN (Print)0780312635
StatePublished - 1993
EventAnnual Meeting of the IEEE Lasers and Electro-Optics Society - San jose, CA, USA
Duration: 15 Nov 199318 Nov 1993

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting

Conference

ConferenceAnnual Meeting of the IEEE Lasers and Electro-Optics Society
CitySan jose, CA, USA
Period15/11/9318/11/93

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