P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display

Kyoung Min Lee; Wan Shick Hong; Jae Dam Hwang; Youn Jin Lee; Kil Sun No

doi:10.1889/1.3500031

P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display

Kyoung Min Lee, Wan Shick Hong, Jae Dam Hwang, Youn Jin Lee, Kil Sun No

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

Abstract

The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H₂ treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.

Original language	English
Pages (from-to)	1595-1598
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	41 1
DOIs	https://doi.org/10.1889/1.3500031
State	Published - May 2010

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title = "P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display",

abstract = "The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H2 treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.",

author = "Lee, {Kyoung Min} and Hong, {Wan Shick} and Hwang, {Jae Dam} and Lee, {Youn Jin} and No, {Kil Sun}",

year = "2010",

month = may,

doi = "10.1889/1.3500031",

language = "English",

volume = "41 1",

pages = "1595--1598",

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publisher = "John Wiley and Sons Inc.",

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AU - Hwang, Jae Dam

AU - Lee, Youn Jin

AU - No, Kil Sun

PY - 2010/5

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AB - The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H2 treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

ER -

P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display

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