P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display

Kyoung Min Lee; Wan Shick Hong; Jae Dam Hwang; Youn Jin Lee; Kil Sun No

P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display

Kyoung Min Lee, Wan Shick Hong, Jae Dam Hwang, Youn Jin Lee, Kil Sun No

Department of Materials Science and Engineering

University of Seoul

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H₂ treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.

Original language	English
Title of host publication	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages	1595-1598
Number of pages	4
State	Published - 2010
Event	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States Duration: 23 May 2010 → 28 May 2010

Publication series

Name	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Volume	3

Conference

Conference	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Country/Territory	United States
City	Seattle, WA
Period	23/05/10 → 28/05/10

Cite this

Lee, K. M., Hong, W. S., Hwang, J. D., Lee, Y. J., & No, K. S. (2010). P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (pp. 1595-1598). (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010; Vol. 3).

Lee, Kyoung Min ; Hong, Wan Shick ; Hwang, Jae Dam et al. / P-93 : Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2010. pp. 1595-1598 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010).

@inproceedings{84c2a514f0f24384818e615a66b3b533,

title = "P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display",

abstract = "The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H2 treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.",

author = "Lee, {Kyoung Min} and Hong, {Wan Shick} and Hwang, {Jae Dam} and Lee, {Youn Jin} and No, {Kil Sun}",

year = "2010",

language = "English",

isbn = "9781618390950",

series = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

pages = "1595--1598",

booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

note = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 ; Conference date: 23-05-2010 Through 28-05-2010",

}

Lee, KM, Hong, WS, Hwang, JD, Lee, YJ & No, KS 2010, P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display. in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, vol. 3, pp. 1595-1598, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, Seattle, WA, United States, 23/05/10.

P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display. / Lee, Kyoung Min; Hong, Wan Shick; Hwang, Jae Dam et al.
48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2010. p. 1595-1598 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - No, Kil Sun

PY - 2010

Y1 - 2010

N2 - The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H2 treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.

AB - The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H2 treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.

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M3 - Conference contribution

AN - SCOPUS:80755143675

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T3 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

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BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

Y2 - 23 May 2010 through 28 May 2010

ER -

P-93: Silicon nanocrystals embedded in silicon-rich silicon nitride films for application of light emitting diodes in flexible display

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