Abstract
The silicon nanocrystals embedded in silicon-rich silicon nitride films were deposited by catalytic CVD at low temperature (≤200°C). Excimer laser annealing and in-situ H2 treatment were performed to increase quantum efficiency. Electrical properties of metal-insulator-semiconductor structures using these samples were measured.
| Original language | English |
|---|---|
| Pages (from-to) | 1595-1598 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 41 1 |
| DOIs | |
| State | Published - May 2010 |
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