Abstract
The fabrication and characterization of n-ZnO/p-pentacene vertical p-n junction diodes on ITO coated glass was reported. A continuous ZnO nanoparticle film was prepared on the ITO substrate by thermally decomposing zinc acetate in the open atmosphere. 10 m zinc acetate solution was prepared in ethanol, and the ITO substrate was dip-coated with this solution with a speed approximately 2 mm/sec with an angle 60 with horizontal. This substrate was immediately placed on a 70°C heater. This process was repeated four times, and after that, the heater temperature with the substrate on it was raised to 200°C at a rate 20°C. The AFM micrograph of the ZnO layer shows a lack of pinholes throughout the film. he current density and rectification speed in the atmosphere also reported higher than organic vertical diodes with relatively lower operating voltage.
Original language | English |
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Pages (from-to) | 1023-1028 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 20 |
Issue number | 5 |
DOIs | |
State | Published - 5 Mar 2008 |