Pentacene-zinc oxide vertical diode with compatible grains and 15-MHz rectification

Bhola Nath Pal, Jia Sun, Byung Jun Jung, Edward Choi, Andreas G. Andreou, Howard E. Katz

Research output: Contribution to journalArticlepeer-review

100 Scopus citations


The fabrication and characterization of n-ZnO/p-pentacene vertical p-n junction diodes on ITO coated glass was reported. A continuous ZnO nanoparticle film was prepared on the ITO substrate by thermally decomposing zinc acetate in the open atmosphere. 10 m zinc acetate solution was prepared in ethanol, and the ITO substrate was dip-coated with this solution with a speed approximately 2 mm/sec with an angle 60 with horizontal. This substrate was immediately placed on a 70°C heater. This process was repeated four times, and after that, the heater temperature with the substrate on it was raised to 200°C at a rate 20°C. The AFM micrograph of the ZnO layer shows a lack of pinholes throughout the film. he current density and rectification speed in the atmosphere also reported higher than organic vertical diodes with relatively lower operating voltage.

Original languageEnglish
Pages (from-to)1023-1028
Number of pages6
JournalAdvanced Materials
Issue number5
StatePublished - 5 Mar 2008


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