Pentacene-zinc oxide vertical diode with compatible grains and 15-MHz rectification

The fabrication and characterization of n-ZnO/p-pentacene vertical p-n junction diodes on ITO coated glass was reported. A continuous ZnO nanoparticle film was prepared on the ITO substrate by thermally decomposing zinc acetate in the open atmosphere. 10 m zinc acetate solution was prepared in ethanol, and the ITO substrate was dip-coated with this solution with a speed approximately 2 mm/sec with an angle 60 with horizontal. This substrate was immediately placed on a 70°C heater. This process was repeated four times, and after that, the heater temperature with the substrate on it was raised to 200°C at a rate 20°C. The AFM micrograph of the ZnO layer shows a lack of pinholes throughout the film. he current density and rectification speed in the atmosphere also reported higher than organic vertical diodes with relatively lower operating voltage.