TY - GEN
T1 - Performance improvement of OTFTs using double layer insulator
AU - Park, Dong Wook
AU - Lee, Cheon An
AU - Jung, Keum Dong
AU - Kim, Byeong Ju
AU - Park, Byung Gook
AU - Shin, Hyungcheol
AU - Lee, Jong Duk
PY - 2006
Y1 - 2006
N2 - Organic thin-film transistors (OTFTs) with improved performance are fabricated using SiO2/cross-linked PVA double layer insulator. The improved fieldeffect mobility, on-current, off-current, on/off ratio, and subthreshold slope are 0.12 cm2/V-sec, 9.2x106A, 2x10 12A, 4.6x106, and 0.4 V/dec, respectively. In addition, a negligible threshold voltage shift is observed in the device. The performance improvements are attributed to good leakage characteristic of SiO2 and high-k characteristic of crosslinked PVA. Based on the proposed OTFTs, an organic inverter working as high as 1 kHz is implemented.
AB - Organic thin-film transistors (OTFTs) with improved performance are fabricated using SiO2/cross-linked PVA double layer insulator. The improved fieldeffect mobility, on-current, off-current, on/off ratio, and subthreshold slope are 0.12 cm2/V-sec, 9.2x106A, 2x10 12A, 4.6x106, and 0.4 V/dec, respectively. In addition, a negligible threshold voltage shift is observed in the device. The performance improvements are attributed to good leakage characteristic of SiO2 and high-k characteristic of crosslinked PVA. Based on the proposed OTFTs, an organic inverter working as high as 1 kHz is implemented.
UR - http://www.scopus.com/inward/record.url?scp=35148826848&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2006.381017
DO - 10.1109/SMELEC.2006.381017
M3 - Conference contribution
AN - SCOPUS:35148826848
SN - 0780397312
SN - 9780780397316
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 48
EP - 51
BT - ICSE 2006
T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Y2 - 29 November 2006 through 1 December 2006
ER -