Phase coexistence in the metal-insulator transition of a VO2 thin film

Y. J. Chang; C. H. Koo; J. S. Yang; Y. S. Kim; D. H. Kim; J. S. Lee; T. W. Noh; Hyun Tak Kim; B. G. Chae

doi:10.1016/j.tsf.2004.11.220

Phase coexistence in the metal-insulator transition of a VO₂ thin film

Y. J. Chang, C. H. Koo, J. S. Yang, Y. S. Kim, D. H. Kim, J. S. Lee, T. W. Noh, Hyun Tak Kim, B. G. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Vanadium dioxide (VO₂) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO₂ is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO₂ thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO₂ occurs through metal and insulator phase coexistence.

Original language	English
Pages (from-to)	46-49
Number of pages	4
Journal	Thin Solid Films
Volume	486
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.11.220
State	Published - 22 Aug 2005

Keywords

Optical spectroscopy
Scanning tunneling microscopy
Vanadium oxide

Access to Document

10.1016/j.tsf.2004.11.220

Cite this

@article{b2c48fbde14841da97deacb39dfb4b72,

title = "Phase coexistence in the metal-insulator transition of a VO2 thin film",

abstract = "Vanadium dioxide (VO2) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO2 occurs through metal and insulator phase coexistence.",

keywords = "Optical spectroscopy, Scanning tunneling microscopy, Vanadium oxide",

author = "Chang, {Y. J.} and Koo, {C. H.} and Yang, {J. S.} and Kim, {Y. S.} and Kim, {D. H.} and Lee, {J. S.} and Noh, {T. W.} and Kim, {Hyun Tak} and Chae, {B. G.}",

year = "2005",

month = aug,

day = "22",

doi = "10.1016/j.tsf.2004.11.220",

language = "English",

volume = "486",

pages = "46--49",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Phase coexistence in the metal-insulator transition of a VO2 thin film

AU - Chang, Y. J.

AU - Koo, C. H.

AU - Yang, J. S.

AU - Kim, Y. S.

AU - Kim, D. H.

AU - Lee, J. S.

AU - Noh, T. W.

AU - Kim, Hyun Tak

AU - Chae, B. G.

PY - 2005/8/22

Y1 - 2005/8/22

N2 - Vanadium dioxide (VO2) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO2 occurs through metal and insulator phase coexistence.

AB - Vanadium dioxide (VO2) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO2 occurs through metal and insulator phase coexistence.

KW - Optical spectroscopy

KW - Scanning tunneling microscopy

KW - Vanadium oxide

UR - http://www.scopus.com/inward/record.url?scp=22044432576&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.11.220

DO - 10.1016/j.tsf.2004.11.220

M3 - Article

AN - SCOPUS:22044432576

SN - 0040-6090

VL - 486

SP - 46

EP - 49

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Phase coexistence in the metal-insulator transition of a VO₂ thin film

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this