TY - JOUR
T1 - Phase noise enhancement of the GaAs high electron mobility transistors using micromachined cavity resonators at Ka-band
AU - Song, Insang
AU - Kim, Chungwoo
AU - Kwon, Youngwoo
AU - Cheon, Changyul
AU - Song, Cimoo
PY - 1999/6/15
Y1 - 1999/6/15
N2 - We introduce a new structure of the micromachined cavity resonator coupled GaAs-based oscillator to enhance the phase noise and the frequency stability. The oscillator and the cavity are designed for Ka-band applications. Compared to the free running oscillator, the cavity resonator coupled oscillator showed the phase noise enhancement of about 20 dB. The phase noises of about -110 and -85 dBc/Hz are obtained at 1 MHz and 100 kHz offset frequency, respectively. The frequency pushing for the gate bias of the cavity coupled oscillator is about two order of magnitude less than that of the free running oscillator.
AB - We introduce a new structure of the micromachined cavity resonator coupled GaAs-based oscillator to enhance the phase noise and the frequency stability. The oscillator and the cavity are designed for Ka-band applications. Compared to the free running oscillator, the cavity resonator coupled oscillator showed the phase noise enhancement of about 20 dB. The phase noises of about -110 and -85 dBc/Hz are obtained at 1 MHz and 100 kHz offset frequency, respectively. The frequency pushing for the gate bias of the cavity coupled oscillator is about two order of magnitude less than that of the free running oscillator.
UR - http://www.scopus.com/inward/record.url?scp=0032659121&partnerID=8YFLogxK
U2 - 10.1143/jjap.38.l601
DO - 10.1143/jjap.38.l601
M3 - Article
AN - SCOPUS:0032659121
SN - 0021-4922
VL - 38
SP - L601-L602
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 6 A/B
ER -