Abstract
Measurement of picosecond electrical signals using a photoconductive step-function gate is demonstrated analytically and experimentally. The time resolution of our step-function technique is limited only by the rise time of the step-function, which is approximately the same as the laser pulse width. Also, a regular, undoped semiconductor material, which is essential for the realization of a short-duration gate, can be used instead of the highly defected material. The use of undoped material gives 10 to 100 times higher sensitivity in the measurement than the impulse-function technique because of the high mobility of the undoped material.
| Original language | English |
|---|---|
| Pages (from-to) | 186-188 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Guided Wave Letters |
| Volume | 4 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1994 |
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