Abstract
We fabricated metal-insulator-semiconductor (MIS) capacitors and p-i-n diodes using silicon rich silicon nitride (SRSN) film containing silicon nanocrystals (Si NCs) prepared by catalytic chemical vapor deposition (Cat-CVD). Photo/dark current difference and photo/dark hysterisis appeared in the current-voltage (I-V) and the capacitance-voltage (C-V) curves, respectively.
Original language | English |
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Pages | 533-534 |
Number of pages | 2 |
State | Published - 2010 |
Event | 17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010 |
Conference
Conference | 17th International Display Workshops, IDW'10 |
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Country/Territory | Japan |
City | Fukuoka |
Period | 1/12/10 → 3/12/10 |