Photocurable propyl-cinnamate-functionalized polyhedral oligomeric silsesquioxane as a gate dielectric for organic thin film transistors

Yuntae Kim, Jeongkyun Roh, Ji Hoon Kim, Chan Mo Kang, In Nam Kang, Byung Jun Jung, Changhee Lee, Do Hoon Hwang

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

A polyhedral oligomeric silsesquioxane (POSS)-based insulating material with photocurable propyl-cinnamate groups (POSS-CYNNAM) was designed and synthesized through simple single step reaction for use as a gate dielectric in organic thin-film transistors (OTFT). POSS-CYNNAM was soluble in common organic solvents and formed a smooth thin film after spin-casting. A thin film of POSS-CYNNAM was cross-linked and completely solidified under UV irradiation without the use of additives such as photoacid generators or photoradical initiators. ITO/insulator/Au devices were fabricated and characterized to measure the dielectric properties of POSS-CYNNAM thin films, such as leakage current and capacitance. A pentacene-based OTFT using the synthesized insulator as the gate dielectric layer was fabricated on the transparent indium tin oxide (ITO) electrode, and its performance was compared to OTFTs using thermally cross-linked poly(vinyl phenol) (PVP) as the insulator. The fabricated POSS-CYNNAM OTFT showed a comparable performance to devices based on the PVP insulator with 0.1 cm2/Vs of the field effect mobility and 4.2

Original languageEnglish
Pages (from-to)2315-2323
Number of pages9
JournalOrganic Electronics
Volume14
Issue number9
DOIs
StatePublished - 2013

Keywords

  • Insulator
  • Photocurable cinnamate
  • Polyhedral oligomeric silsesquioxane

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