Photoluminescence characteristics and chemical composition of SiN x:H films with various gas mixture ratio at low temperature

Jae Dam Hwang, Kyoung Min Lee, Ki Su Keum, Seunghun Jang, Youn Jin Lee, Moonsup Han, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Hydrogenated silicon nitride (a-SiNx:H) thin films deposited at low substrate temperature (200°C) show the different bonding configurations and photoluminescence characteristics which depend on the silicon concentrations in the films controlled by the gas ratio R of nitrogen to silane during the deposition. The composition of SiNx:H film was analyzed by Fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL) spectroscopy. We observed FTIR peak position were changed and PL energy variation with gas ratio R.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages632-633
Number of pages2
StatePublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

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