Photoluminescence induced by thermal annealing in SrTiO3 thin film

Jaehoon Rho; Seunghun Jang; Young Dong Ko; Seungjin Kang; Dong Wook Kim; J. S. Chung; Miyoung Kim; Moonsup Han; Eunjip Choi

doi:10.1063/1.3275707

Photoluminescence induced by thermal annealing in SrTiO₃ thin film

Jaehoon Rho, Seunghun Jang, Young Dong Ko, Seungjin Kang, Dong Wook Kim, J. S. Chung, Miyoung Kim, Moonsup Han, Eunjip Choi

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We have grown SrTiO₃ thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 °C) annealing. When subsequent low-T (50 °C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at λ=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap.

Original language	English
Article number	241906
Journal	Applied Physics Letters
Volume	95
Issue number	24
DOIs	https://doi.org/10.1063/1.3275707
State	Published - 14 Dec 2009

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@article{4c08c64000a548ec93a2c548f380c7c9,

title = "Photoluminescence induced by thermal annealing in SrTiO3 thin film",

abstract = "We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 °C) annealing. When subsequent low-T (50 °C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at λ=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap.",

author = "Jaehoon Rho and Seunghun Jang and Ko, {Young Dong} and Seungjin Kang and Kim, {Dong Wook} and Chung, {J. S.} and Miyoung Kim and Moonsup Han and Eunjip Choi",

year = "2009",

month = dec,

day = "14",

doi = "10.1063/1.3275707",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Photoluminescence induced by thermal annealing in SrTiO3 thin film

AU - Rho, Jaehoon

AU - Jang, Seunghun

AU - Ko, Young Dong

AU - Kang, Seungjin

AU - Kim, Dong Wook

AU - Chung, J. S.

AU - Kim, Miyoung

AU - Han, Moonsup

AU - Choi, Eunjip

PY - 2009/12/14

Y1 - 2009/12/14

N2 - We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 °C) annealing. When subsequent low-T (50 °C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at λ=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap.

AB - We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 °C) annealing. When subsequent low-T (50 °C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at λ=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap.

UR - http://www.scopus.com/inward/record.url?scp=77956140100&partnerID=8YFLogxK

U2 - 10.1063/1.3275707

DO - 10.1063/1.3275707

M3 - Article

AN - SCOPUS:77956140100

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241906

ER -

Photoluminescence induced by thermal annealing in SrTiO₃ thin film

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