Abstract
Threshold voltage shift ( Δ V T) under various current stress (CS) conditions need to be quantitatively studied in self-aligned top-gate amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Here, we propose a stretched-exponential function (SEF)-based Δ V T model that can be applied to various combinations of V GS and VDS. The proposed model indicates the characteristic electron trapping time constant τ 1 is inversely proportional to (VGS - V T ). In contrast, the time constant τ 2 is directly proportional to the square root of ( VDS+Vbi), presumably due to the local donor creation by a lateral electric field. The proposed model was verified experimentally in various VGS and VDS configurations. Further, it is confirmed that the lateral electric field dominantly influences donor creation near the drain.
Original language | English |
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Pages (from-to) | 1685-1688 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 43 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2022 |
Keywords
- InGaZnO thin-film transistors
- current stress
- donor creation
- electron trapping
- self-aligned top-gate structure