Polarization switching of ferroelectric polycrystals: Finite element modeling and simulations

Sang Joo Kim

doi:10.1117/12.484197

Polarization switching of ferroelectric polycrystals: Finite element modeling and simulations

Sang Joo Kim

Department of Mechanical and Information Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A three-dimensional constitutive model for polarization switching in ferroelectric ceramics is presented and implemented into a finite element code. The developed code is used to investigate the nucleation and growth of new domains in a ferroelectric thin film, which is poled upward initially and whose bottom electrode is grounded. Then a point on the top surface of the film is subjected to a constant positive electric potential for a certain period of time, leading to a polarization switching downward. The distribution of electric field and polarization are not homogeneous within the film. The evolution of switched zone is calculated and qualitatively compared with experimental observations.

Original language	English
Pages (from-to)	387-394
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5053
DOIs	https://doi.org/10.1117/12.484197
State	Published - 2003
Event	PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Smart Structures and Materials 2003 Active Materials: Behavior and Mechanics - San Diego, CA, United States Duration: 3 Mar 2003 → 6 Mar 2003

Keywords

Domain nucleation and growth
Ferroelectric films
Finite element method

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10.1117/12.484197

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title = "Polarization switching of ferroelectric polycrystals: Finite element modeling and simulations",

abstract = "A three-dimensional constitutive model for polarization switching in ferroelectric ceramics is presented and implemented into a finite element code. The developed code is used to investigate the nucleation and growth of new domains in a ferroelectric thin film, which is poled upward initially and whose bottom electrode is grounded. Then a point on the top surface of the film is subjected to a constant positive electric potential for a certain period of time, leading to a polarization switching downward. The distribution of electric field and polarization are not homogeneous within the film. The evolution of switched zone is calculated and qualitatively compared with experimental observations.",

keywords = "Domain nucleation and growth, Ferroelectric films, Finite element method",

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T2 - PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Smart Structures and Materials 2003 Active Materials: Behavior and Mechanics

AU - Kim, Sang Joo

PY - 2003

Y1 - 2003

N2 - A three-dimensional constitutive model for polarization switching in ferroelectric ceramics is presented and implemented into a finite element code. The developed code is used to investigate the nucleation and growth of new domains in a ferroelectric thin film, which is poled upward initially and whose bottom electrode is grounded. Then a point on the top surface of the film is subjected to a constant positive electric potential for a certain period of time, leading to a polarization switching downward. The distribution of electric field and polarization are not homogeneous within the film. The evolution of switched zone is calculated and qualitatively compared with experimental observations.

AB - A three-dimensional constitutive model for polarization switching in ferroelectric ceramics is presented and implemented into a finite element code. The developed code is used to investigate the nucleation and growth of new domains in a ferroelectric thin film, which is poled upward initially and whose bottom electrode is grounded. Then a point on the top surface of the film is subjected to a constant positive electric potential for a certain period of time, leading to a polarization switching downward. The distribution of electric field and polarization are not homogeneous within the film. The evolution of switched zone is calculated and qualitatively compared with experimental observations.

KW - Domain nucleation and growth

KW - Ferroelectric films

KW - Finite element method

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U2 - 10.1117/12.484197

DO - 10.1117/12.484197

M3 - Conference article

AN - SCOPUS:0242525639

SN - 0277-786X

VL - 5053

SP - 387

EP - 394

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 3 March 2003 through 6 March 2003

ER -

Polarization switching of ferroelectric polycrystals: Finite element modeling and simulations

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Keywords

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