Polymer interfacial layer with high glass transition temperature for the improvement of bias stability in organic field-effect transistors

Jeongkyun Roh, Hyeonwoo Shin, Hyeok Kim, Changhee Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We investigated the bias stability of organic field-effect transistors (OFETs) with a gate dielectric modified with a polymer with a high glass transition temperature, which is a cyclic olefin copolymer (COC). With the COC modification, the surface of the SiO2 gate dielectric became significantly more hydrophobic and exhibited low surface energy, which yielded an enhanced crystallinity of the organic semiconductors. As a result of a reduced surface trap density and enlarged grain size that was obtained by employing COC, the bias stability and electrical performance of a pentacene OFET were remarkably improved. After two hours of biasing, the bias-stress-induced threshold voltage shift (ΔVTH) was significantly reduced from 10 V to 2 V, and the relaxation time (π) extracted from a stretched exponential fit was extended from 2.7 × 104 sec to 4.7 × 106 sec. We also applied this surface modification method to n-type OFETs and determined that the COC modification is applicable to other types of FETs to improve the bias stability.

Original languageEnglish
Pages (from-to)10325-10330
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number10
DOIs
StatePublished - Oct 2016

Keywords

  • Bias stability
  • High glass transition temperature polymer
  • Organic field-effect transistors

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