Prediction of domain nucleation and growth during polarization switching in ferroelectric thin films

Sang Joo Kim; Joonho Shin; Yun Jae Kim

doi:10.1063/1.1538340

Prediction of domain nucleation and growth during polarization switching in ferroelectric thin films

Sang Joo Kim, Joonho Shin, Yun Jae Kim

Department of Mechanical and Information Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The polarization switching in ferroelectric thin films was analyzed. A finite element code was developed and the code was used to predict the nucleation and growth of domains in ferroelectric thin films. The analysis showed that initially the switched zone was of a dagger shape but after the penetration of thin films by the switched zone it changes to the shape of a reversed cup.

Original language	English
Pages (from-to)	2145-2152
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.1538340
State	Published - 15 Feb 2003

Access to Document

10.1063/1.1538340

Cite this

@article{47d4fcb58d374674bfdd00116b1f15f1,

title = "Prediction of domain nucleation and growth during polarization switching in ferroelectric thin films",

abstract = "The polarization switching in ferroelectric thin films was analyzed. A finite element code was developed and the code was used to predict the nucleation and growth of domains in ferroelectric thin films. The analysis showed that initially the switched zone was of a dagger shape but after the penetration of thin films by the switched zone it changes to the shape of a reversed cup.",

author = "Kim, {Sang Joo} and Joonho Shin and Kim, {Yun Jae}",

year = "2003",

month = feb,

day = "15",

doi = "10.1063/1.1538340",

language = "English",

volume = "93",

pages = "2145--2152",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Prediction of domain nucleation and growth during polarization switching in ferroelectric thin films

AU - Kim, Sang Joo

AU - Shin, Joonho

AU - Kim, Yun Jae

PY - 2003/2/15

Y1 - 2003/2/15

N2 - The polarization switching in ferroelectric thin films was analyzed. A finite element code was developed and the code was used to predict the nucleation and growth of domains in ferroelectric thin films. The analysis showed that initially the switched zone was of a dagger shape but after the penetration of thin films by the switched zone it changes to the shape of a reversed cup.

AB - The polarization switching in ferroelectric thin films was analyzed. A finite element code was developed and the code was used to predict the nucleation and growth of domains in ferroelectric thin films. The analysis showed that initially the switched zone was of a dagger shape but after the penetration of thin films by the switched zone it changes to the shape of a reversed cup.

UR - http://www.scopus.com/inward/record.url?scp=0037442474&partnerID=8YFLogxK

U2 - 10.1063/1.1538340

DO - 10.1063/1.1538340

M3 - Article

AN - SCOPUS:0037442474

SN - 0021-8979

VL - 93

SP - 2145

EP - 2152

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Prediction of domain nucleation and growth during polarization switching in ferroelectric thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this