Predictive modeling of channel potential in 3-D NAND flash memory

Yoon Kim; Myounggon Kang

doi:10.1109/TED.2014.2355918

Predictive modeling of channel potential in 3-D NAND flash memory

Yoon Kim, Myounggon Kang

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

For the first time, this brief analyzes the channel potential and capacitance in channel-stack type 3-D NAND flash memory structure. In addition, the effects of geometrical parameters on 3-D NAND flash design with gate-all-around and double-gate devices are studied. The model can be incorporated into a compact circuit model for 3-D NAND flash design optimization.

Original language	English
Article number	6913535
Pages (from-to)	3901-3904
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	11
DOIs	https://doi.org/10.1109/TED.2014.2355918
State	Published - 1 Nov 2014

Keywords

3-D NAND flash memory
capacitance modeling
nanowire SONOS
stacked array

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10.1109/TED.2014.2355918

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abstract = "For the first time, this brief analyzes the channel potential and capacitance in channel-stack type 3-D NAND flash memory structure. In addition, the effects of geometrical parameters on 3-D NAND flash design with gate-all-around and double-gate devices are studied. The model can be incorporated into a compact circuit model for 3-D NAND flash design optimization.",

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AB - For the first time, this brief analyzes the channel potential and capacitance in channel-stack type 3-D NAND flash memory structure. In addition, the effects of geometrical parameters on 3-D NAND flash design with gate-all-around and double-gate devices are studied. The model can be incorporated into a compact circuit model for 3-D NAND flash design optimization.

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KW - stacked array

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Predictive modeling of channel potential in 3-D NAND flash memory

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