@inproceedings{1a6b37da7c4f46d7aaea8de5da0a0f8d,
title = "Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application",
abstract = "Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).",
author = "Mawst, {L. J.} and Kim, {T. W.} and Garrod, {T. J.} and Kuech, {T. F.} and K. Kim and Lee, {J. J.} and Lalumondiere, {S. D.} and Y. Sin and Lotshaw, {W. T.} and Moss, {S. C.} and R. Tatavarti",
year = "2013",
doi = "10.1364/acpc.2013.aw4k.5",
language = "English",
isbn = "9781557529893",
series = "Asia Communications and Photonics Conference, ACP",
publisher = "OSA - The Optical Society",
booktitle = "Asia Communications and Photonics Conference, ACP 2013",
note = "Asia Communications and Photonics Conference, ACP 2013 ; Conference date: 12-11-2013 Through 15-11-2013",
}