Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

L. J. Mawst, T. W. Kim, T. J. Garrod, T. F. Kuech, K. Kim, J. J. Lee, S. D. Lalumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, R. Tatavarti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).

Original languageEnglish
Title of host publicationAsia Communications and Photonics Conference, ACP 2013
PublisherOSA - The Optical Society
ISBN (Print)9781557529893
DOIs
StatePublished - 2013
EventAsia Communications and Photonics Conference, ACP 2013 - Beijing, China
Duration: 12 Nov 201315 Nov 2013

Publication series

NameAsia Communications and Photonics Conference, ACP
ISSN (Print)2162-108X

Conference

ConferenceAsia Communications and Photonics Conference, ACP 2013
Country/TerritoryChina
CityBeijing
Period12/11/1315/11/13

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