Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

L. J. Mawst; T. W. Kim; T. J. Garrod; T. F. Kuech; K. Kim; J. J. Lee; S. D. Lalumondiere; Y. Sin; W. T. Lotshaw; S. C. Moss; R. Tatavarti

doi:10.1364/acpc.2013.aw4k.5

Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

L. J. Mawst, T. W. Kim, T. J. Garrod, T. F. Kuech, K. Kim, J. J. Lee, S. D. Lalumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, R. Tatavarti

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (V_oc=0.72V).

Original language	English
Title of host publication	Asia Communications and Photonics Conference, ACP 2013
Publisher	OSA - The Optical Society
ISBN (Print)	9781557529893
DOIs	https://doi.org/10.1364/acpc.2013.aw4k.5
State	Published - 2013
Event	Asia Communications and Photonics Conference, ACP 2013 - Beijing, China Duration: 12 Nov 2013 → 15 Nov 2013

Publication series

Name	Asia Communications and Photonics Conference, ACP
ISSN (Print)	2162-108X

Conference

Conference	Asia Communications and Photonics Conference, ACP 2013
Country/Territory	China
City	Beijing
Period	12/11/13 → 15/11/13

Access to Document

10.1364/acpc.2013.aw4k.5

Cite this

Mawst, L. J., Kim, T. W., Garrod, T. J., Kuech, T. F., Kim, K., Lee, J. J., Lalumondiere, S. D., Sin, Y., Lotshaw, W. T., Moss, S. C., & Tatavarti, R. (2013). Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application. In Asia Communications and Photonics Conference, ACP 2013 (Asia Communications and Photonics Conference, ACP). OSA - The Optical Society. https://doi.org/10.1364/acpc.2013.aw4k.5

@inproceedings{1a6b37da7c4f46d7aaea8de5da0a0f8d,

title = "Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application",

abstract = "Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22\% with high open circuit voltages (Voc=0.72V).",

author = "Mawst, \{L. J.\} and Kim, \{T. W.\} and Garrod, \{T. J.\} and Kuech, \{T. F.\} and K. Kim and Lee, \{J. J.\} and Lalumondiere, \{S. D.\} and Y. Sin and Lotshaw, \{W. T.\} and Moss, \{S. C.\} and R. Tatavarti",

year = "2013",

doi = "10.1364/acpc.2013.aw4k.5",

language = "English",

isbn = "9781557529893",

series = "Asia Communications and Photonics Conference, ACP",

publisher = "OSA - The Optical Society",

booktitle = "Asia Communications and Photonics Conference, ACP 2013",

note = "Asia Communications and Photonics Conference, ACP 2013 ; Conference date: 12-11-2013 Through 15-11-2013",

}

Mawst, LJ, Kim, TW, Garrod, TJ, Kuech, TF, Kim, K, Lee, JJ, Lalumondiere, SD, Sin, Y, Lotshaw, WT, Moss, SC & Tatavarti, R 2013, Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application. in Asia Communications and Photonics Conference, ACP 2013. Asia Communications and Photonics Conference, ACP, OSA - The Optical Society, Asia Communications and Photonics Conference, ACP 2013, Beijing, China, 12/11/13. https://doi.org/10.1364/acpc.2013.aw4k.5

Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application. / Mawst, L. J.; Kim, T. W.; Garrod, T. J. et al.
Asia Communications and Photonics Conference, ACP 2013. OSA - The Optical Society, 2013. (Asia Communications and Photonics Conference, ACP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

AU - Mawst, L. J.

AU - Kim, T. W.

AU - Garrod, T. J.

AU - Kuech, T. F.

AU - Kim, K.

AU - Lee, J. J.

AU - Lalumondiere, S. D.

AU - Sin, Y.

AU - Lotshaw, W. T.

AU - Moss, S. C.

AU - Tatavarti, R.

PY - 2013

Y1 - 2013

N2 - Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).

AB - Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).

UR - https://www.scopus.com/pages/publications/85088183818

U2 - 10.1364/acpc.2013.aw4k.5

DO - 10.1364/acpc.2013.aw4k.5

M3 - Conference contribution

AN - SCOPUS:85088183818

SN - 9781557529893

T3 - Asia Communications and Photonics Conference, ACP

BT - Asia Communications and Photonics Conference, ACP 2013

PB - OSA - The Optical Society

T2 - Asia Communications and Photonics Conference, ACP 2013

Y2 - 12 November 2013 through 15 November 2013

ER -

Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this