Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

L. J. Mawst; T. W. Kim; T. J. Garrod; T. F. Kuech; K. Kim; J. J. Lee; S. D. Lalumondiere; Y. Sin; W. T. Lotshaw; S. C. Moss; R. Tatavarti

doi:10.1364/acpc.2013.aw4k.5

Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

L. J. Mawst
, T. W. Kim
, T. J. Garrod
, T. F. Kuech
, K. Kim
, J. J. Lee
, S. D. Lalumondiere
, Y. Sin
, W. T. Lotshaw
, S. C. Moss
, R. Tatavarti

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (V_oc=0.72V).

Original language	English
Title of host publication	Asia Communications and Photonics Conference, ACP 2013
Publisher	OSA - The Optical Society
ISBN (Print)	9781557529893
DOIs	https://doi.org/10.1364/acpc.2013.aw4k.5
State	Published - 2013
Event	Asia Communications and Photonics Conference, ACP 2013 - Beijing, China Duration: 12 Nov 2013 → 15 Nov 2013

Publication series

Name	Asia Communications and Photonics Conference, ACP
ISSN (Print)	2162-108X

Conference

Conference	Asia Communications and Photonics Conference, ACP 2013
Country/Territory	China
City	Beijing
Period	12/11/13 → 15/11/13

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10.1364/acpc.2013.aw4k.5

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Mawst, L. J., Kim, T. W., Garrod, T. J., Kuech, T. F., Kim, K., Lee, J. J., Lalumondiere, S. D., Sin, Y., Lotshaw, W. T., Moss, S. C., & Tatavarti, R. (2013). Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application. In Asia Communications and Photonics Conference, ACP 2013 (Asia Communications and Photonics Conference, ACP). OSA - The Optical Society. https://doi.org/10.1364/acpc.2013.aw4k.5

@inproceedings{1a6b37da7c4f46d7aaea8de5da0a0f8d,

title = "Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application",

abstract = "Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22\% with high open circuit voltages (Voc=0.72V).",

author = "Mawst, \{L. J.\} and Kim, \{T. W.\} and Garrod, \{T. J.\} and Kuech, \{T. F.\} and K. Kim and Lee, \{J. J.\} and Lalumondiere, \{S. D.\} and Y. Sin and Lotshaw, \{W. T.\} and Moss, \{S. C.\} and R. Tatavarti",

year = "2013",

doi = "10.1364/acpc.2013.aw4k.5",

language = "English",

isbn = "9781557529893",

series = "Asia Communications and Photonics Conference, ACP",

publisher = "OSA - The Optical Society",

booktitle = "Asia Communications and Photonics Conference, ACP 2013",

note = "Asia Communications and Photonics Conference, ACP 2013 ; Conference date: 12-11-2013 Through 15-11-2013",

}

Mawst, LJ, Kim, TW, Garrod, TJ, Kuech, TF, Kim, K, Lee, JJ, Lalumondiere, SD, Sin, Y, Lotshaw, WT, Moss, SC & Tatavarti, R 2013, Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application. in Asia Communications and Photonics Conference, ACP 2013. Asia Communications and Photonics Conference, ACP, OSA - The Optical Society, Asia Communications and Photonics Conference, ACP 2013, Beijing, China, 12/11/13. https://doi.org/10.1364/acpc.2013.aw4k.5

Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application. / Mawst, L. J.; Kim, T. W.; Garrod, T. J. et al.
Asia Communications and Photonics Conference, ACP 2013. OSA - The Optical Society, 2013. (Asia Communications and Photonics Conference, ACP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

AU - Mawst, L. J.

AU - Kim, T. W.

AU - Garrod, T. J.

AU - Kuech, T. F.

AU - Kim, K.

AU - Lee, J. J.

AU - Lalumondiere, S. D.

AU - Sin, Y.

AU - Lotshaw, W. T.

AU - Moss, S. C.

AU - Tatavarti, R.

PY - 2013

Y1 - 2013

N2 - Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).

AB - Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally latticematched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).

UR - https://www.scopus.com/pages/publications/85088183818

U2 - 10.1364/acpc.2013.aw4k.5

DO - 10.1364/acpc.2013.aw4k.5

M3 - Conference contribution

AN - SCOPUS:85088183818

SN - 9781557529893

T3 - Asia Communications and Photonics Conference, ACP

BT - Asia Communications and Photonics Conference, ACP 2013

PB - OSA - The Optical Society

T2 - Asia Communications and Photonics Conference, ACP 2013

Y2 - 12 November 2013 through 15 November 2013

ER -

Properties of dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) for solar cell application

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