Properties of resistive switching in TiO2 nanocluster-SiOx (X<2) matrix structure

Seunggon Song, Kyongmin Kim, Kyun Ho Jung, Junghyun Sok, Kyoungwan Park

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In this study, we investigate the resistance change nonvolatile memory properties of TiO2 nanoclusters with SiOx(x<2) matrix layers. We fabricate polycrystalline rutile nanoclusters of TiO2 distributed in a SiOx(x<2) layer using SiO2/Si/TiO2 multilayers by thermal annealing at a temperature of 900°C for 3 h. We examine the resistive switching behaviors based on the current-voltage sweep. Then, we explain the conduction mechanisms of the low-and high-resistance states of the device using a combination of Ohmic conduction in Magnéli (or Magnéli-like) nanophases of TiO2 and trap-assisted tunneling in the lower SiOx(x<2) matrix layer and Poole–Frenkel emission, respectively. Both the phase change of TiO2 nanoclusters and conducting filament formation/rupture in the SiOx(x<2) matrix are attributed mainly to resistive switching in the device.

Original languageEnglish
Pages (from-to)108-114
Number of pages7
JournalJournal of Semiconductor Technology and Science
Issue number1
StatePublished - Feb 2018


  • Magnéli phase
  • Nonvolatile memory
  • Resistive switching
  • SiO(x<2)
  • TiO nanocluster


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