Properties of resistive switching in TiO2 nanocluster-SiOx (X<2) matrix structure

Seunggon Song; Kyongmin Kim; Kyun Ho Jung; Junghyun Sok; Kyoungwan Park

doi:10.5573/JSTS.2018.18.1.108

Properties of resistive switching in TiO₂ nanocluster-SiO_x (X<2) matrix structure

Seunggon Song, Kyongmin Kim, Kyun Ho Jung, Junghyun Sok, Kyoungwan Park

Department of Physics

University of Seoul

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, we investigate the resistance change nonvolatile memory properties of TiO₂ nanoclusters with SiO_x(x<2) matrix layers. We fabricate polycrystalline rutile nanoclusters of TiO₂ distributed in a SiO_x(x<2) layer using SiO₂/Si/TiO₂ multilayers by thermal annealing at a temperature of 900°C for 3 h. We examine the resistive switching behaviors based on the current-voltage sweep. Then, we explain the conduction mechanisms of the low-and high-resistance states of the device using a combination of Ohmic conduction in Magnéli (or Magnéli-like) nanophases of TiO₂ and trap-assisted tunneling in the lower SiO_x(x<2) matrix layer and Poole–Frenkel emission, respectively. Both the phase change of TiO₂ nanoclusters and conducting filament formation/rupture in the SiO_x(x<2) matrix are attributed mainly to resistive switching in the device.

Original language	English
Pages (from-to)	108-114
Number of pages	7
Journal	Journal of Semiconductor Technology and Science
Volume	18
Issue number	1
DOIs	https://doi.org/10.5573/JSTS.2018.18.1.108
State	Published - Feb 2018

Keywords

Magnéli phase
Nonvolatile memory
Resistive switching
SiO(x<2)
TiO nanocluster

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10.5573/JSTS.2018.18.1.108

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@article{edc76734dc6a4cb29350f54c8ce37789,

title = "Properties of resistive switching in TiO2 nanocluster-SiOx (X<2) matrix structure",

abstract = "In this study, we investigate the resistance change nonvolatile memory properties of TiO2 nanoclusters with SiOx(x<2) matrix layers. We fabricate polycrystalline rutile nanoclusters of TiO2 distributed in a SiOx(x<2) layer using SiO2/Si/TiO2 multilayers by thermal annealing at a temperature of 900°C for 3 h. We examine the resistive switching behaviors based on the current-voltage sweep. Then, we explain the conduction mechanisms of the low-and high-resistance states of the device using a combination of Ohmic conduction in Magn{\'e}li (or Magn{\'e}li-like) nanophases of TiO2 and trap-assisted tunneling in the lower SiOx(x<2) matrix layer and Poole–Frenkel emission, respectively. Both the phase change of TiO2 nanoclusters and conducting filament formation/rupture in the SiOx(x<2) matrix are attributed mainly to resistive switching in the device.",

keywords = "Magn{\'e}li phase, Nonvolatile memory, Resistive switching, SiO(x<2), TiO nanocluster",

author = "Seunggon Song and Kyongmin Kim and Jung, {Kyun Ho} and Junghyun Sok and Kyoungwan Park",

year = "2018",

month = feb,

doi = "10.5573/JSTS.2018.18.1.108",

language = "English",

volume = "18",

pages = "108--114",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

publisher = "Institute of Electronics Engineers of Korea",

number = "1",

}

TY - JOUR

T1 - Properties of resistive switching in TiO2 nanocluster-SiOx (X<2) matrix structure

AU - Song, Seunggon

AU - Kim, Kyongmin

AU - Jung, Kyun Ho

AU - Sok, Junghyun

AU - Park, Kyoungwan

PY - 2018/2

Y1 - 2018/2

N2 - In this study, we investigate the resistance change nonvolatile memory properties of TiO2 nanoclusters with SiOx(x<2) matrix layers. We fabricate polycrystalline rutile nanoclusters of TiO2 distributed in a SiOx(x<2) layer using SiO2/Si/TiO2 multilayers by thermal annealing at a temperature of 900°C for 3 h. We examine the resistive switching behaviors based on the current-voltage sweep. Then, we explain the conduction mechanisms of the low-and high-resistance states of the device using a combination of Ohmic conduction in Magnéli (or Magnéli-like) nanophases of TiO2 and trap-assisted tunneling in the lower SiOx(x<2) matrix layer and Poole–Frenkel emission, respectively. Both the phase change of TiO2 nanoclusters and conducting filament formation/rupture in the SiOx(x<2) matrix are attributed mainly to resistive switching in the device.

AB - In this study, we investigate the resistance change nonvolatile memory properties of TiO2 nanoclusters with SiOx(x<2) matrix layers. We fabricate polycrystalline rutile nanoclusters of TiO2 distributed in a SiOx(x<2) layer using SiO2/Si/TiO2 multilayers by thermal annealing at a temperature of 900°C for 3 h. We examine the resistive switching behaviors based on the current-voltage sweep. Then, we explain the conduction mechanisms of the low-and high-resistance states of the device using a combination of Ohmic conduction in Magnéli (or Magnéli-like) nanophases of TiO2 and trap-assisted tunneling in the lower SiOx(x<2) matrix layer and Poole–Frenkel emission, respectively. Both the phase change of TiO2 nanoclusters and conducting filament formation/rupture in the SiOx(x<2) matrix are attributed mainly to resistive switching in the device.

KW - Magnéli phase

KW - Nonvolatile memory

KW - Resistive switching

KW - SiO(x<2)

KW - TiO nanocluster

UR - http://www.scopus.com/inward/record.url?scp=85042801145&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2018.18.1.108

DO - 10.5573/JSTS.2018.18.1.108

M3 - Article

AN - SCOPUS:85042801145

SN - 1598-1657

VL - 18

SP - 108

EP - 114

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 1

ER -

Properties of resistive switching in TiO₂ nanocluster-SiO_x (X<2) matrix structure

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