Property of the nano-thick TiO2 films using an ALD at low temperature

Kijeong Yoon, Ohsung Song

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We fabricated 10 nm-TiO2 thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of 150°C and 250°C. We characterized the cross-sectional microstructure, phase, chemical binding energy, and absorption of the TiO2 using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform TiO2 thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric TiO2 phase was formed and confirmed by measuring main characteristic peaks of Ti 2p1, Ti 2p3, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-TiO2 thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional TiO2 films had a band gap of 3.0 eV (rutile)∼3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick TiO2 film using an ALD process at 150°C had almost the same properties as thsose of film at 250°C. Therefore, we confirmed that the ALD-processed TiO2 thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.

Original languageEnglish
Pages (from-to)515-520
Number of pages6
JournalKorean Journal of Materials Research
Issue number10
StatePublished - Oct 2008


  • ALD
  • Dye sensitized solar cell
  • Low temperature
  • Nano-thickness
  • TiO


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