Abstract
We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN (~ 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.
Original language | English |
---|---|
Pages (from-to) | 920-924 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 72 |
Issue number | 8 |
DOIs | |
State | Published - 1 Apr 2018 |
Keywords
- GaN
- Hall effect
- Photoluminescence
- Proton irradiation