Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

In Hak Lee, Chul Lee, Byoung Ki Choi, Yeseul Yun, Young Jun Chang, Seung Yup Jang

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7 Scopus citations


We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN (~ 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.

Original languageEnglish
Pages (from-to)920-924
Number of pages5
JournalJournal of the Korean Physical Society
Issue number8
StatePublished - 1 Apr 2018


  • GaN
  • Hall effect
  • Photoluminescence
  • Proton irradiation


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