Pulsed electron deposition of 50-nm-thick ZnO film at room temperature

Jaehoon Rho; Kwangnam Yu; Rok Hwan Jeong; J. H. Park; J. S. Chung; Eunjip Choi

doi:10.1143/JJAP.50.120209

Pulsed electron deposition of 50-nm-thick ZnO film at room temperature

Jaehoon Rho, Kwangnam Yu, Rok Hwan Jeong, J. H. Park, J. S. Chung, Eunjip Choi

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We used pulsed electron deposition (PED) method to grow 50-nm-thick ZnO thin film on quartz and Si substrate at room temperature. X-ray diffraction (XRD) measurement shows the (002) peak with full width at half maximum (FWHM) of 0.87. Photoluminescenct (PL) and IR transmission data exhibit the energy band gap (3.3 eV) and optical phonon frequency (50.7 meV) which are consistent with those of single crystal ZnO. Visible-UV transmission level is enhanced when oxygen partial pressure in the growth chamber increases. Our results prove that thin ZnO film with reasonable structural, surface and optical property can be grown at low temperatures using PED method.

Original language	English
Article number	120209
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	50
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.50.120209
State	Published - Dec 2011

Access to Document

10.1143/JJAP.50.120209

Cite this

@article{2271a93cbd4a430daeb7c0ae9e6c0b76,

title = "Pulsed electron deposition of 50-nm-thick ZnO film at room temperature",

abstract = "We used pulsed electron deposition (PED) method to grow 50-nm-thick ZnO thin film on quartz and Si substrate at room temperature. X-ray diffraction (XRD) measurement shows the (002) peak with full width at half maximum (FWHM) of 0.87. Photoluminescenct (PL) and IR transmission data exhibit the energy band gap (3.3 eV) and optical phonon frequency (50.7 meV) which are consistent with those of single crystal ZnO. Visible-UV transmission level is enhanced when oxygen partial pressure in the growth chamber increases. Our results prove that thin ZnO film with reasonable structural, surface and optical property can be grown at low temperatures using PED method.",

author = "Jaehoon Rho and Kwangnam Yu and Jeong, {Rok Hwan} and Park, {J. H.} and Chung, {J. S.} and Eunjip Choi",

year = "2011",

month = dec,

doi = "10.1143/JJAP.50.120209",

language = "English",

volume = "50",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Pulsed electron deposition of 50-nm-thick ZnO film at room temperature

AU - Rho, Jaehoon

AU - Yu, Kwangnam

AU - Jeong, Rok Hwan

AU - Park, J. H.

AU - Chung, J. S.

AU - Choi, Eunjip

PY - 2011/12

Y1 - 2011/12

N2 - We used pulsed electron deposition (PED) method to grow 50-nm-thick ZnO thin film on quartz and Si substrate at room temperature. X-ray diffraction (XRD) measurement shows the (002) peak with full width at half maximum (FWHM) of 0.87. Photoluminescenct (PL) and IR transmission data exhibit the energy band gap (3.3 eV) and optical phonon frequency (50.7 meV) which are consistent with those of single crystal ZnO. Visible-UV transmission level is enhanced when oxygen partial pressure in the growth chamber increases. Our results prove that thin ZnO film with reasonable structural, surface and optical property can be grown at low temperatures using PED method.

AB - We used pulsed electron deposition (PED) method to grow 50-nm-thick ZnO thin film on quartz and Si substrate at room temperature. X-ray diffraction (XRD) measurement shows the (002) peak with full width at half maximum (FWHM) of 0.87. Photoluminescenct (PL) and IR transmission data exhibit the energy band gap (3.3 eV) and optical phonon frequency (50.7 meV) which are consistent with those of single crystal ZnO. Visible-UV transmission level is enhanced when oxygen partial pressure in the growth chamber increases. Our results prove that thin ZnO film with reasonable structural, surface and optical property can be grown at low temperatures using PED method.

UR - http://www.scopus.com/inward/record.url?scp=82955227991&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.120209

DO - 10.1143/JJAP.50.120209

M3 - Article

AN - SCOPUS:82955227991

SN - 0021-4922

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 12

M1 - 120209

ER -

Pulsed electron deposition of 50-nm-thick ZnO film at room temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this